Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFL4105PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
55V
0.045
3.7A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The SOT-223 package is designed for surface-mount using vapor
phase, infra red, or wave soldering techniques. Its unique
package design allows for easy automatic pick-and-place as with
other SOT or SOIC packages but has the added advantage of
improved thermal performance due to an enlarged tab for heat
sinking. Power dissipation of 1.0W is possible in a typical surface
mount application.
SOT-223
G
Gate
D
Drain
S
Source
Base Part Number
IRFL4105PbF
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
IRFL4105PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
5.2
3.7
3.0
30
2.1
1.0
8.3
± 20
110
3.7
0.10
5.0
-55 to + 150
Units
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount)
Maximum Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JA
R
JA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Junction-to-Ambient (PCB Mount, steady state)
Typ.
90
50
Max.
120
60
Units
°C/W
1
2016-5-27
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
IRFL4105PbF
Min. Typ. Max. Units
Conditions
55
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.058 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.045
V
GS
= 10V, I
D
= 3.7A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
3.8
–––
–––
S V
DS
= 25V, I
D
= 1.9A
––– –––
25
V
DS
= 55 V, V
GS
= 0V
µA
––– –––
250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
––– –––
100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
–––
23
35
I
D
= 3.7A
nC
V
DS
= 44V
–––
3.4
5.1
V
GS
= 10V , See Fig. 6 and 13
–––
9.8
15
–––
7.1
–––
V
DD
= 28V
–––
12
–––
I
D
= 3.7A
ns
–––
19
–––
R
G
= 6.0
–––
12
–––
R
D
= 7.5See Fig. 10
––– 660
–––
V
GS
= 0V
pF
V
DS
= 25V
––– 230
–––
ƒ = 1.0MHz, See Fig. 5
–––
99
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
55
120
Max. Units
1.3
A
30
1.3
82
170
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 3.7A,V
GS
= 0V
T
J
= 25°C ,I
F
= 3.7A
di/dt = 100A/µs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 16mH, R
G
= 25, I
AS
= 3.7A (See fig. 12)
I
SD
3.7A,
di/dt
110A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs;
duty cycle
2%.
2
2016-5-27
IRFL4105PbF
100
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
4.5V
1
0.1
20µs PULSE WIDTH
T
C
= 25°C
1
10
A
100
1
0.1
20µs PULSE WIDTH
T
J
= 150°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
VDS , Drain-to-Source Voltage (V)
Fig. 2
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 3.7A
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
1.5
1.0
0.5
1
4.0
4.5
5.0
5.5
V
DS
= 25V
20µs PULSE WIDTH
6.0
6.5
7.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
T
J
, Junction Temperature (°C)
Fig. 4
Normalized On-Resistance
vs. Temperature
2016-5-27
3
IRFL4105PbF
1200
1000
V
GS
, Gate-to-Source Voltage (V)
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 3.7A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
800
C
oss
600
12
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 9
30
40
A
V
DS
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
I
D
, Drain Current (A)
10
100µs
10
T
J
= 150°C
T
J
= 25°C
1ms
1
10ms
1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
0.1
0.1
T
A
= 25°C
T
J
= 150°C
Single Pulse
1
10
100
A
V
SD
, Source-to-Drain Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
V
DS
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
2016-5-27
IRFL4105PbF
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit
Fig 9b.
Gate Charge Test Circuit
1000
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
0.1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
A
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2016-5-27
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