Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFIZ44NPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
55V
0.024
31A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
G
Gate
G
D
S
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFIZ44NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFIZ44NPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
31
22
160
45
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
0.3
± 20
210
25
4.5
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
1
Parameter
Typ.
–––
–––
Max.
3.3
65
Units
°C/W
2017-04-27
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
IRFIZ44NPbF
Min. Typ. Max. Units
Conditions
55
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.055 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.024
V
GS
= 10V, I
D
= 17A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
17
–––
–––
S V
DS
= 25V, I
D
= 25A
––– –––
25
V
DS
= 55V, V
GS
= 0V
µA
––– –––
250
V
DS
= 55V,V
GS
= 0V,T
J
=150°C
––– –––
100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
––– –––
65
I
D
= 25A
nC
V
DS
= 44V
––– –––
12
V
GS
= 10V , See Fig. 6 and 13
––– –––
27
–––
7.3
–––
V
DD
= 28V
–––
69
–––
I
D
=25A
ns
–––
47
–––
R
G
= 12
–––
60
–––
R
D
= 1.1See Fig. 10
Between lead,
–––
4.5
–––
6mm (0.25in.)
nH
from package
–––
7.5
–––
and center of die contact
––– 1300 –––
V
GS
= 0V
––– 410
–––
V = 25V
pF
DS
ƒ = 1.0MHz, See Fig. 5
––– 150
–––
–––
12
–––
ƒ = 1.0MHz
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
65
160
Max. Units
31
A
160
1.3
98
240
V
ns
C
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 17A,V
GS
= 0V
T
J
= 25°C ,I
F
= 25A
di/dt = 100A/µs
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
t
on
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 470
µ
H, R
G
= 25, I
AS
= 25A (See fig. 12)
I
SD
25A,
di/dt
320A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
t=60s, ƒ=60Hz
Uses IRFZ44N data and test conditions.
2
2017-04-27
IRFIZ44NPbF
1000
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
10
4.5V
4.5V
10
1
0.1
20µs PULSE WIDTH
T
C
= 25°C
1
10
A
100
1
0.1
20µs PULSE WIDTH
T
C
= 175°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
VDS , Drain-to-Source Voltage (V)
Fig. 2
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 25°C
T
J
= 175°C
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
T
J
, Junction Temperature (°C)
Fig. 4
Normalized On-Resistance
vs. Temperature
2017-04-27
3
IRFIZ44NPbF
2500
V
GS
, Gate-to-Source Voltage (V)
2000
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 25A
V
DS
= 44V
V
DS
= 28V
16
C, Capacitance (pF)
1500
12
C
oss
1000
8
500
C
rss
4
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
70
A
V
DS
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10µs
T
J
= 175°C
100µs
10
T
J
= 25°C
10
1ms
1
0.5
1.0
1.5
2.0
V
GS
= 0V
2.5
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
3.0
100
A
V
SD
, Source-to-Drain Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
V
DS
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
2017-04-27
IRFIZ44NPbF
35
30
I
D
, Drain Current (A)
25
20
15
10
5
0
Fig 10a.
Switching Time Test Circuit
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
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