Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFIZ34NPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
I
D
55V
0.04
21A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
G
Gate
G
D
S
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFIZ34NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFIZ34NPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Max.
21
15
100
37
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
0.24
± 20
110
16
3.7
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
1
Parameter
Typ.
–––
–––
Max.
4.1
65
Units
°C/W
2017-04-27
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
IRFIZ34NPbF
Min. Typ. Max. Units
Conditions
55
–––
–––
V V
GS
= 0V, I
D
= 250µA
––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.04
V
GS
= 10V, I
D
= 11A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
6.5
–––
–––
S V
DS
= 25V, I
D
= 16A
––– –––
25
V
DS
= 55V, V
GS
= 0V
µA
––– –––
250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
––– –––
100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
––– –––
34
I
D
= 16A
nC
V
DS
= 44V
––– –––
6.8
V
GS
= 10V , See Fig. 6 and 13
––– –––
14
–––
7.0
–––
V
DD
= 26V
–––
49
–––
I
D
= 16A
ns
–––
31
–––
R
G
= 18
–––
40
–––
R
D
= 1.8See Fig. 10
Between lead,
–––
4.5
–––
6mm (0.25in.)
nH
from package
–––
7.5
–––
and center of die contact
––– 700
–––
V
GS
= 0V
––– 240
–––
V = 25V
pF
DS
ƒ = 1.0MHz, See Fig. 5
––– 100
–––
–––
12
–––
ƒ = 1.0MHz
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
130
Max. Units
21
A
100
1.6
86
200
V
ns
C
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 11A,V
GS
= 0V
T
J
= 25°C ,I
F
= 16A
di/dt = 100A/µs
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
Drain to Sink Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
t
on
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V, starting T
J
= 25°C, L = 610
µ
H, R
G
= 25, I
AS
= 16A (See fig. 12)
I
SD
16A,
di/dt
420A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
t=60s, ƒ=60Hz
Uses IRFZ34N data and test conditions.
2
2017-04-27
IRFIZ34NPbF
1000
TOP
I , Drain-to-Source Current (A)
D
100
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
10
10
4.5V
20µs PULSE WIDTH
T
J
T
C
= 25°C
1
10
4.5V
1
0.1
A
100
VDS , Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
T
J
= 175°C
C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
100
2.4
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 26A
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 175°C
2.0
1.6
10
1.2
0.8
0.4
1
4
5
6
7
V
DS
= 25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
T
J
, Junction Temperature (°C)
Fig. 4
Normalized On-Resistance
vs. Temperature
2017-04-27
3
IRFIZ34NPbF
1200
1000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 16A
V
DS
= 44V
V
DS
= 28V
16
C, Capacitance (pF)
800
C
oss
600
12
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10µs
T
J
= 175°C
T
J
= 25°C
100µs
10
1ms
10
1
0.4
0.8
1.2
1.6
V
GS
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
2.0
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2017-04-27
IRFIZ34NPbF
25
20
I
D
, Drain Current (A)
15
10
Fig 10a.
Switching Time Test Circuit
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-04-27
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