PD - 94102
IRFIZ24V
Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Optimized for SMPS Applications
Description
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HEXFET
®
Power MOSFET
D
V
DSS
= 60V
R
DS(on)
= 0.060Ω
G
S
Advanced
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
HEXFET
®
I
D
= 14A
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
14
10
68
26
0.18
± 20
17
4.4
4.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
5.7
62
Units
°C/W
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1
03/12/01
IRFIZ24V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
60
–––
–––
2.0
7.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.6
46
21
24
4.5
7.5
590
140
23
140
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
60
mΩ V
GS
= 10V, I
D
= 10A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 10A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
23
I
D
= 17A
7.7
nC
V
DS
= 48V
6.2
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 17A
ns
–––
R
G
= 18Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
43
mJ I
AS
= 17A
, L = 300µH
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
14
––– –––
showing the
A
G
integral reverse
68
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 17A
, V
GS
= 0V
–––
53
79
ns
T
J
= 25°C, I
F
= 17A
––– 90 130
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Starting T
J
= 25°C, L = 300µH
R
G
= 25Ω, I
AS
= 14A. (See Figure 12)
I
SD
≤
14A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
I
D
= 17A is copied from TO-220 device.
2
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IRFIZ24V
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
= 17A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
2.5
2.0
10
1.5
1.0
0.5
1
4
6
8
V DS = 25V
20µs PULSE WIDTH
10
12
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFIZ24V
1000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
I
D
= 17A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
V
GS
, Gate-to-Source Voltage (V)
800
16
C, Capacitance(pF)
Ciss
600
Coss = C + Cgd
ds
12
Coss
400
8
200
Crss
4
0
1
10
100
0
0
4
8
12
FOR TEST CIRCUIT
SEE FIGURE 13
16
20
24
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I
SD
, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
T
J
= 175
°
C
100
10
100µsec
1msec
1
T
J
= 25
°
C
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
0.1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFIZ24V
15
V
DS
12
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
-
V
DD
9
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
6
Fig 10a.
Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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