PD-91816B
SMPS MOSFET
IRFIB5N65A
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
High Voltage Isolation = 2.5KVRMS
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
650V
R
DS(on)
max
0.93Ω
I
D
5.1A
TO-220 Full-Pak
GDS
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.1
3.2
21
60
0.48
± 30
2.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
l
Single Transistor Flyback
Single Transistor Forward
Notes
through
are
on page 8
www.irf.com
1
6/21/00
IRFIB5N65A
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
650 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.67 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.93
Ω
V
GS
= 10V, I
D
= 3.1.A
2.0
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
V
DS
= 650V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 520V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
14
20
34
18
1417
177
7.0
1912
48
84
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 3.1A
48
I
D
= 5.2A
12
nC V
DS
= 400V
19
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 325V
–––
I
D
= 5.2A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 62Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 520V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 520V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
325
5.2
6
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.1
65
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 5.2
showing the
A
G
integral reverse
––– –––
21
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
––– 493 739
ns
T
J
= 25°C, I
F
= 5.2A
––– 2.1 3.2
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
www.irf.com
IRFIB5N65A
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
1
1
0.1
0.1
4.5V
T
J
= 25
°
C
1
10
20µs PULSE WIDTH
0.1
100
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
= 5.2A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
10
2.0
T
J
= 150
°
C
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
4.0
V DS = 100V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFIB5N65A
2000
V
GS
, Gate-to-Source Voltage (V)
1600
V
GS
C
is s
C
rss
C
oss
=
=
=
=
0V,
f = 1M Hz
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
ds
+ C
gd
20
I
D
= 5.2A
V
DS
=
400V
520V
V
DS
= 325V
V
DS
= 130V
16
C , C a pa c itan c e (p F )
C
is s
1200
12
C
oss
800
8
400
4
C
rs s
0
1
10
100
1000
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
10us
I
D
, Drain Current (A)
10
10
100us
T
J
= 150
°
C
1ms
1
10ms
1
T
J
= 25
°
C
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
0.2
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFIB5N65A
6.0
V
DS
V
GS
R
G
R
D
5.0
D.U.T.
+
I
D
, Drain Current (A)
4.0
-
V
DD
10V
3.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
1.0
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
