CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Measured from the
Source Lead, 5mm (0.2in)
from Header and Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
Electrical Specifications
PARAMETER
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±20V
V
GS
= 10V, I
D
= 1.0A (Figures 8, 9)
V
DS
≥
10V, I
D
= 2.0A (Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, R
G
= 9.1Ω, V
GS
= 10V,
I
D
≈
1.6A (Figures 17, 18), R
L
= 152Ω for V
DSS
= 250V,
R
L
= 137Ω for V
DSS
= 225V, MOSFET Switching
Times are Essentially Independent of Operating
Temperature
V
GS
= 10V, I
D
= 1.6A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature.
MIN
500
2.0
-
-
1.6
-
-
1.5
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
2.5
2.5
30
25
30
15
11
5.0
6.0
300
75
20
5.0
MAX
-
4.0
25
250
-
±100
3.000
-
60
50
60
30
15
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance
(Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
15
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
6.25
175
o
C/W
o
C/W
2
IRFF420
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
D
MIN
-
-
TYP
-
-
MAX
1.6
6.5
UNITS
A
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.6A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 1.6A, dI
SD
/d
t
= 100A/µs
T
J
= 150
o
C, I
SD
= 1.6A, dI
SD
/d
t
= 100A/µs
-
-
-
-
600
3.5
1.4
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, start T
J
= 25
o
C, L = 143.5mH, R
G
= 25Ω, peak I
AS
= 1.6A (Figures 15,16).
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
50
100
150
2.0
1.6
0.8
0.6
0.4
0.2
0
1.2
0.8
0.4
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
THERMAL IMPEDANCE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10
-5
SINGLE PULSE
10
-4
10
-3
10
-2
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
1
10
P
DM
Z
θJC
, NORMALIZED
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
我最近在《华尔街日报》看到一篇题为“我们需要能维修自己的电子小玩意儿的权利(We need the right to repair our gadgets)”的文章(参考原文：)，作者对于众多电子产品看来是“有计画的废弃(planned obsolescence)”之现象非常愤怒，认为大众应该要求电子产品可以被维修。 但实际的情况是，举例来说，家家都有的电视机如果故障了，修理费用可能...[详细]
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