IRFE230
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
≈
2.16 (0.085)
1.27 (0.050)
1.07 (0.040)
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
11
7.62 (0.300)
7.12 (0.280)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
10
9
8
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
200V
4.8A
Ω
0.46Ω
7
6
5
4
3
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
Rad.
0.08 (0.003)
1.39 (0.055)
1.15 (0.045)
0.43 (0.017)
0.18 (0.007 Rad.
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
LCC4
MOSFET
GATE
DRAIN
SOURCE
• AVALANCHE ENERGY RATING
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
TRANSISTOR
BASE
COLLECTOR
EMITTER
• SIMPLE DRIVE REQUIREMENTS
• LIGHT WEIGHT
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
±20V
4.8A
3.1A
19A
22W
0.17W/°C
54mJ
4.5V/ns
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= 50V , L
≥
570µH , R
G
= 25Ω , Peak I
L
= 14A , Starting T
J
= 25°C
3) @ I
SD
≤
14A , di/dt
≤
140A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 7.5Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
10/98
IRFE230
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
Min.
200
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
∆T
J
Breakdown Voltage
Static Drain – Source On–State
R
DS(on)
Resistance
1
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
1
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
I
D
= 3.1A
V
GS
= 10V
I
D
= 4.8A
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 4.8A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
=4.8A
R
G
= 7.5Ω
I
D
= 250mA
I
DS
= 3.1A
V
DS
= 0.8BV
DSS
T
J
= 125°C
2
2.5
0.25
0.40
0.46
4
25
250
100
–100
600
250
80
7.4
2.5
6.0
42.1
5.3
28.1
30
50
50
40
4.8
19
1.4
6.0
3.0
Negligible
1.8
4.3
5.8
19
V / °C
Ω
V
S (É)
µA
nA
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
T
J
= 25°C
I
S
= 4.8A
Diode Forward Voltage
1
V
GS
= 0
Reverse Recovery Time
I
F
= 4.8A
T
J
= 25°C
Reverse Recovery Charge
1
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
A
V
ns
µC
nH
R
θJC
R
θJPC
°C/W
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
10/98
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
