CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 9)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
MIN
100
2.0
-
-
1.0
-
-
0.8
-
-
-
-
V
GS
= 10V, I
D
≈
1.0A, V
DS
= 0.8 x Rated BV
DSS,
I
g(REF)
= 1.5mA (Figure 13)
Gate Charge is Essentially Independent of
Operating Temperature
V
GS
= 0V, V
DS
= 25V, f = 1MHz
(Figure 10)
-
-
-
-
-
-
Measured from the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Measured from the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
D
L
D
G
L
S
S
TYP
-
-
-
-
-
-
0.5
1.2
10
15
15
10
5.0
2.0
3.0
135
80
20
4.0
MAX
-
4.0
25
250
-
±100
0.6
-
20
25
25
20
7.0
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
I
D
= 0.8A, V
GS
= 10V (Figures 7, 8)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 0.8A (Figure 11)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
1.0A,
R
G
= 9.1Ω, R
L
= 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
Internal Source Inductance
L
S
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θJA
Free Air Operation
-
-
120
o
C/W
4-270
IRFD110
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 4)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
1.0
8.0
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.0A, V
GS
= 0V (Figure 12)
T
J
= 150
o
C, I
SD
= 1.0A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 1.0A, dI
SD
/dt = 100A/µs
-
-
-
-
100
0.2
2.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 28.5mH, R
G
= 25Ω, peak I
AS
= 1.0A.
4. Repetitive rating: pulse width limited by maximum junction temperature.
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