PD- 91897A
SMPS MOSFET
IRFBC40AS
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified ( See AN 1001)
V
DSS
600V
Rds(on) max
1.2Ω
I
D
6.2A
D
2
P ak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
6.2
3.9
25
125
1.0
± 30
6.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topology:
l
Single transistor Forward
Notes
through
are on page 9
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1
6/29/99
IRFBC40AS
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
–––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
2.0
–––
I
DSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
I
GSS
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.66
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
–––
V/°C Reference to 25°C, I
D
= 1mA
1.2
Ω
V
GS
= 10V, I
D
= 3.7A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 600V, V
GS
= 0V
µA
250
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
13
23
31
18
1036
136
7.0
1487
36
48
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 3.7A
42
I
D
= 6.2A
10
nC V
DS
= 480V
20
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 300V
–––
I
D
= 6.2A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 47Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 480V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 480V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
570
6.2
13
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
–––
Max.
1.0
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
––– ––– 6.2
showing the
A
G
integral reverse
––– –––
25
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 6.2A, V
GS
= 0V
––– 431 647
ns
T
J
= 25°C, I
F
= 6.2A
––– 1.8 2.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFBC40AS
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
1
4.5V
0.1
4.5V
1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
J
1
10
100
0.1
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
J
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics,
Fig 2.
Typical Output Characteristics,
100
3.0
I
D
= 5.9A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 150
°
C
10
2.0
T
J
= 25
°
C
1
1.5
1.0
0.5
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFBC40AS
100000
20
V
GS
, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
= 5.9A
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
16
C, Capacitance(pF)
1000
Ciss
12
100
Coss
8
10
Crss
4
1
1
10
100
1000
0
0
8
16
FOR TEST CIRCUIT
SEE FIGURE 13
24
32
40
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
T
J
= 150
°
C
I
D
, Drain Current (A)
10
100us
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFBC40AS
7.0
V
DS
V
GS
R
G
R
D
6.0
D.U.T.
+
I
D
, Drain Current (A)
5.0
-
V
DD
4.0
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
3.0
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
1.0
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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