CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA, (Figure 11)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
V
GS
= 10V, I
D
= 3.4A (Figures 9, 10)
V
DS
≥
100V, I
DS
= 3.4A (Figure 13)
V
DD
= 300V, I
D
≈
6.2A, R
G
= 9.1Ω, V
GS
= 10V,
R
L
= 47Ω Switching Speeds are Essentially
ndependent of Operating Temperature
MIN
600
2.0
-
-
6.2
-
-
4.7
-
-
-
-
TYP
-
-
-
-
-
-
0.97
70
13
18
55
20
40
5.5
20
1300
160
45
4.5
MAX
-
4.0
25
250
-
±100
1.2
-
20
27
83
30
60
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 6.2A, V
DS
= 0.7 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially Independent of
Operating Temperature
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 12)
-
-
-
-
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Typical Socket Mount
-
-
-
-
1.0
80
o
C/W
o
C/W
4-264
IRFBC40
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
6.2
25
UNITS
A
A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V (Figure 8)
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
-
200
1.8
-
450
3.8
1.5
940
8.0
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 16mH, R
G
= 25Ω, peak I
AS
= 6.8A
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
10
0.8
0.6
0.4
0.2
0
I
D,
DRAIN CURRENT (A)
0
50
100
150
8
6
4
2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
Z
θJC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
0.5
0.2
0.1
0.1
0.05
0.02
0.02
0.01
10
-2
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-4
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
10
-3
10
-5
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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