PD - 94300
SMPS MOSFET
IRFBA90N20D
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
200V
R
DS(on)
max
0.023Ω
I
D
98A
Super-220™
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended Clip Force
Max.
98
71
390
650
4.3
± 30
6.3
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.23
–––
58
Units
°C/W
Notes
through
are on page 8
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1
09/06/01
IRFBA90N20D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.22
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.023
Ω
V
GS
= 10V, I
D
= 59A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
160
45
75
23
160
39
77
6080
1040
150
7500
410
790
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 59A
240
I
D
= 59A
67
nC V
DS
= 160V
110
V
GS
= 10V
–––
V
DD
= 100V
–––
I
D
= 59A
ns
–––
R
G
= 1.2Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
960
59
65
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
98
––– –––
showing the
A
G
integral reverse
––– ––– 390
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 59A, V
GS
= 0V
––– 220 340
nS
T
J
= 25°C, I
F
= 59A
––– 1.9 2.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFBA90N20D
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
100
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
1
5.0V
10
5.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
100
LIMITED BY PACKAGE
ID , Drain-to-Source Current
(Α
)
T J = 175°C
80
100.00
I
D
, Drain Current (A)
60
10.00
T J = 25°C
1.00
40
20
0.10
5.0
7.0
9.0
VDS = 15V
20µs PULSE WIDTH
0
11.0
13.0
15.0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
T
C
, Case Temperature
( °C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFBA90N20D
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
59A
10
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
10000
C, Capacitance(pF)
Ciss
Coss
7
1000
5
Crss
100
2
10
1
10
100
1000
0
0
40
80
120
160
200
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
TJ = 175°C
10.00
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
1msec
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD , Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFBA90N20D
100
LIMITED BY PACKAGE
V
GS
80
V
DS
R
D
D.U.T.
+
R
G
-
V
DD
I
D
, Drain Current (A)
60
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
t
1
/ t
2
J
= P
DM
x Z
thJC
P
DM
t
1
t
2
+T
C
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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