PD -94111
AUTOMOTIVE MOSFET
Typical Applications
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IRFBA1405P
HEXFET
®
Power MOSFET
D
Benefits
Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 5.0mΩ
S
I
D
= 174A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
®
Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175
o
C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220
TM
is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220
TM
package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Super-220™
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
174
123
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
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1
3/1/01
IRFBA1405P
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
4.3
–––
–––
–––
–––
–––
–––
170
44
62
13
190
130
110
4.5
7.5
5480
1210
280
5210
900
1500
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
5.0
mΩ V
GS
= 10V, I
D
= 101A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 110A
20
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
260
I
D
= 101A
66
nC V
DS
= 44V
93
V
GS
= 10V
–––
V
DD
= 38V
–––
I
D
= 110A
ns
–––
R
G
= 1.1Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 174
showing the
A
G
integral reverse
––– ––– 680
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 101A, V
GS
= 0V
––– 88 130
ns
T
J
= 25°C, I
F
= 101A
––– 250 380
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
58
Units
°C/W
2
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IRFBA1405P
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
4.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
1
0.1
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= 169A
I
D
, Drain-to-Source Current (A)
2.5
100
2.0
1.5
10
1.0
0.5
1
4
6
8
V DS = 25V
20µs PULSE WIDTH
10
12
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRFBA1405P
100000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
= 101A
V
DS
= 44V
V
DS
= 27V
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
10000
Ciss
12
Coss
1000
8
Crss
4
100
1
10
100
0
0
60
120
FOR TEST CIRCUIT
SEE FIGURE 13
180
240
300
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
100
I
D
, Drain Current (A)
1000
10us
100
100us
1ms
T
J
= 25
°
C
10
10
10ms
1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFBA1405P
200
LIMITED BY PACKAGE
160
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
120
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
80
Fig 10a.
Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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