PD - 95903A
IRFBA1404PPbF
HEXFET
®
Power MOSFET
Typical Applications
l
Industrial Motor Drive
D
V
DSS
= 40V
R
DS(on)
= 3.7mΩ
Benefits
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175°C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
I
D
= 206A
S
Description
This Stripe Planar design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175
o
C junction operating tempera-
ture, fast switching speed and improved ruggedness in single and repetitive
avalanche. The Super-220
TM
is a package that has been designed to have the
same mechanical outline and pinout as the industry standard TO-220 but can
house a considerably larger silicon die. The result is significantly increased
current handling capability over both the TO-220 and the much larger TO-247
package. The combination of extremely low on-resistance silicon and the
Super-220
TM
package makes it ideal to reduce the component count in
multiparalled TO-220 applications, reduce system power dissipation, upgrade
existing designs or have TO-247 performance in a TO-220 outline.
These benefits make this design an extremely efficient and reliable device for
use in a wide variety of applications.
Super-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
206
145
650
300
2.0
± 20
480
See Fig.12a, 12b, 14, 15
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
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1
09/22/10
IRFBA1404PPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
2.0
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.036
–––
–––
–––
–––
–––
–––
–––
160
35
42
17
140
72
26
2.0
5.0
7360
1680
240
6630
1490
1540
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
3.7
mΩ V
GS
= 10V, I
D
= 95A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 60A
20
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
200
I
D
= 95A
–––
nC
V
DS
= 32V
60
V
GS
= 10V
–––
V
DD
= 20V
–––
I
D
= 95A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 0.21Ω
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 32V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 206
showing the
A
G
integral reverse
––– ––– 650
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
––– 71 110
ns
T
J
= 25°C, I
F
= 95A
––– 180 270
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
0.50
–––
58
Units
°C/W
2
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IRFBA1404PPbF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
4.5V
4.5V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 159A
2.0
1.5
100
1.0
0.5
10
4.0
V DS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFBA1404PPbF
12000
10000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 95A
V
DS
= 32V
V
DS
= 20V
16
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
Coss
2000
4
0
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
T
J
= 175
°
C
1000
10us
100
100
100us
1ms
T
J
= 25
°
C
10
10
10ms
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFBA1404PPbF
240
LIMITED BY PACKAGE
V
DS
V
GS
R
D
I
D
, Drain Current (A)
180
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
120
Fig 10a.
Switching Time Test Circuit
60
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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