HEXFET Power MOSFET
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 980 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (Abs) (ID) | 140 A |
| 最大漏极电流 (ID) | 75 A |
| 最大漏源导通电阻 | 0.007 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | 225 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 330 W |
| 最大脉冲漏极电流 (IDM) | 550 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRFB4310 | IRFS4310 | IRFB4310ZTRLPBF | IRFB4310ZTRRPBF | IRFS4310TRL | IRFS4310TRR | |
|---|---|---|---|---|---|---|
| 描述 | HEXFET Power MOSFET | HEXFET Power MOSFET | Power Field-Effect Transistor, 75A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Power Field-Effect Transistor, 75A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 |
| 是否无铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-220AB | D2PAK | TO-220AB | TO-220AB | D2PAK | D2PAK |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, D2PAK-3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknow | compliant | compliant | unknown | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 980 mJ | 980 mJ | 130 mJ | 130 mJ | 980 mJ | 980 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A |
| 最大漏源导通电阻 | 0.007 Ω | 0.007 Ω | 0.006 Ω | 0.006 Ω | 0.007 Ω | 0.007 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-263AB | TO-220AB | TO-220AB | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e3 | e3 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 3 | 3 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 225 | 225 | 250 | 250 | NOT SPECIFIED | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 550 A | 550 A | 550 A | 550 A | 550 A | 550 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES | NO | NO | YES | YES |
| 端子面层 | TIN LEAD | TIN LEAD | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最高工作温度 | 175 °C | 150 °C | 175 °C | 175 °C | - | 150 °C |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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