Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
600
600
6.2
3.9
25
±20
125
1.0
570
-55 to 150
300
260
IRFAC42
600
600
5.4
3.4
22
±20
125
1.0
570
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
MIN
600
2.0
-
-
TYP
-
-
-
-
MAX
-
4.0
25
250
UNITS
V
V
µA
µA
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
IRFAC40
IRFAC42
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFAC40
IRFAC42
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON) MAX
, V
GS
= 10V
6.2
5.4
-
-
-
-
-
±100
µA
µA
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
V
GS
= 10V, I
D
= 3.4A (Figures 8, 9)
-
-
-
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 6.2A, V
DSS
= 0.8 x Rated
BV
DSS
, I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
≥
50V, I
D
= 3.4A (Figure 12)
V
DD
= 0.5V x Rated BV
DSS
, I
D
≈
6.2A, R
G
=
9.1Ω, R
L
= 47Ω, V
GS
= 10V (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
4.7
-
-
-
-
-
0.97
1.2
70
13
18
55
20
40
1.2
1.6
-
20
27
83
30
60
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
5.5
20
-
-
nC
nC
5-2
IRFAC40, IRFAC42
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
MIN
-
TYP
1300
160
30
MAX
-
UNITS
pF
pF
pF
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.0
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
6.2
25
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
-
200
1.8
-
450
3.8
1.5
940
7.9
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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