PD - 95135
IRF9952PbF
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
D1
D1
D2
D2
N-Ch P-Ch
V
DSS
30V
-30V
3
6
4
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.10Ω 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
SO-8
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
N-Channel
Maximum
P-Channel
30
± 20
-2.3
-1.8
-10
-1.3
2.0
1.3
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
3.5
2.8
16
1.7
A
W
57
-1.3
mJ
A
mJ
V/ ns
44
2.0
0.25
5.0
-5.0
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
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1
09/15/04
IRF9952PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
1.0
-1.0
Typ. Max.
0.015
0.015
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
12
2.4
2.0
-2.0
25
-25
±100
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
6.2 12
9.7 19
8.8 18
14
28
13
26
20
40
3.0 6.0
6.9 14
190
190
120
110
61
54
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 2.2A
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 3.5A
V
DS
= -15V, I
D
= -2.3A
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ±20V
N-Channel
I
D
= 1.8A, V
DS
= 10V, V
GS
= 10V
P-Channel
I
D
= -2.3A, V
DS
= -10V, V
GS
= -10V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
1.7
-1.3
A
16
16
0.82 1.2
T
J
= 25°C, I
S
= 1.25A, V
GS
= 0V
V
-0.82 -1.2
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
27
53
N-Channel
ns
27
54
T
J
= 25°C, I
F
=1.25A, di/dt = 100A/µs
28
57
P-Channel
nC
T
J
= 25°C, I
F
= -1.25A, di/dt = 100A/µs
31
62
Repetitive rating; pulse width limited by
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 23 )
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
2.0A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.3A, di/dt
≤
84A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel
Starting T
J
= 25°C, L = 22mH R
G
= 25Ω, I
AS
= 2.0A. (See Figure 12)
P-Channel
Starting T
J
= 25°C, L = 67mH R
G
= 25Ω, I
AS
= -1.3A.
2
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N-Channel
100
IRF9952PbF
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
10
10
3.0V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
3.0V
20µs PULSE WIDTH
T
J
= 150°C
A
0.1
1
10
1
1
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
10
10
T
J
= 25°C
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
1
1
3.0
3.5
4.0
4.5
V
DS
= 10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF9952PbF
2.0
N-Channel
0.12
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.2A
1.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.10
V
GS
= 4.5V
1.0
0.08
0.5
V
GS
= 10V
0.06
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
0.04
0
2
4
6
8
10
12
A
T
J
, Junction Temperature (
°
C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS
(on) , Drain-to-Source On Resistance (Ω)
E
AS
, Single Pulse Avalanche Energy (mJ)
0.16
100
TOP
80
0.14
BOTTOM
I
D
0.89A
1.6A
2.0A
0.12
0.10
60
0.08
I
D
= 3.5A
0.06
40
0.04
20
0.02
0.00
0
3
6
9
12
15
A
0
25
50
75
100
125
A
150
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (°C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
4
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N-Channel
350
IRF9952PbF
I
D
= 1.8A
V
DS
= 10V
300
V
GS
, Gate-to-Source Voltage (V)
A
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
16
C, Capacitance (pF)
250
C
iss
C
oss
200
12
150
8
100
C
rss
4
50
0
1
10
100
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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