CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the
Modified MOSFET
Contact Screw On Tab To Symbol Showing the
Center of Die
Internal Devices
Measured From the Drain Inductances
Lead, 6mm (0.25in) From
Package to Center of Die
D
L
D
TEST CONDITIONS
I
D
= -250µA, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
V
GS
=
±20V
I
D
= -6.5A, V
GS
= -10V, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -6.5A
(Figure 12)
V
DD
= 50V, I
D
≈
-12A, R
G
= 50Ω, V
GS
= 10V
R
L
=
4.2Ω, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
V
GS
= -10V, I
D
= -12A, V
DSS
= 0.8 x Rated BV
DSS,
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 11)
MIN
-100
-2
-
-
-12
-
-
2
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.250
3.8
30
70
70
70
25
13
12
500
300
100
3.5
MAX
-
-4
-25
-250
-
±100
0.300
-
60
140
140
140
45
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
G
L
S
S
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Typical Socket Mount
-
-
-
-
1.67
62.5
o
C/W
o
C/W
4-10
IRF9530, RF1S9530SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 2)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
-12
-48
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -12A, V
GS
= 0V,
(Figure 13)
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/µs
-
-
-
-
300
1.8
-1.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 5.2mH, R
G
= 25Ω, peak I
AS
= 12A. See Figures 15, 16.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
Unless Otherwise Specified
-12.0
I
D
, DRAIN CURRENT (A)
-9.6
-7.2
0.6
0.4
-4.8
-2.4
0.2
0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ R
θJA
+T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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