IRF9230
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
P–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
1
20.32 (0.800)
18.80 (0.740)
dia.
7.87 (0.310)
6.99 (0.275)
1.78 (0.070)
1.52 (0.060)
11.18 (0.440)
10.67 (0.420)
26.67 (1.050)
max.
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
–200V
–6.5A
Ω
0.8Ω
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= –50V , L
≥
2.3mH , R
G
= 25Ω , Peak I
L
= –6.5A , Starting T
J
= 25°C
3) @ I
SD
≤
–6.5A , di/dt
≤
–100A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 7.5Ω
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
2
Repetitive Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature
1.6mm (0.63”) from case for 10 sec.
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
12.07 (0.475)
11.30 (0.445)
±20V
–6.5A
–4A
–28A
75W
0.6W/°C
66mJ
–6.5A
7.5mJ
–5V/ns
–55 to +150°C
300°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
IRF9230
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= –1mA
Min.
–200
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
∆T
J
Breakdown Voltage
Static Drain – Source On–State
R
DS(on)
Resistance
1
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
1
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
I
D
= –1mA
V
GS
= 10V
I
D
= –4A
V
GS
= 10V
I
D
= –6.5A
V
DS
= V
GS
V
DS
≥
–15V
V
GS
= 0
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
I
D
= –6.5A
V
DS
= 0.5BV
DSS
V
DD
= –100V
I
D
= –6.5A
R
G
= 7.5Ω
I
D
= –250mA
I
DS
= –4A
V
DS
= 0.8BV
DSS
T
J
= 125°C
–2
2
–0.2
0.80
0.92
–4
–25
–250
–100
100
700
200
40
8
0.8
5.0
31
7.0
17
50
100
100
80
–6.5
–28
–6.0
400
4
Negligible
5.0
13
1.67
0.12
30
V / °C
Ω
V
S (É)
µA
nA
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
T
J
= 25°C
I
S
= –6.5A
Diode Forward Voltage
1
V
GS
= 0
Reverse Recovery Time
1
I
F
= –6.5A
T
J
= 25°C
Reverse Recovery Charge
d
i
/ d
t
≤
–100A/µs V
DD
≤
–50V
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
A
V
ns
µC
nH
R
θJC
R
θCS
R
θJA
°C/W
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
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