CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
Modified MOSFET Sym-
bol Showing the Internal
Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= -250µA (Figure 10)
V
GS
= V
DS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON) Max
, V
GS
= -10V
(Figure 7)
V
GS
=
±20V
V
GS
= -10V, I
D
= -10A (Figures 8, 9)
V
DS
> I
D(ON) x
r
DS(ON) Max
, I
D
= -10A
V
DD
= -50V, I
D
≈ −19A,
R
G
= 9.1Ω, R
L
= 2.3Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
MIN
-100
-2.0
-
-
-19
-
-
5.0
-
-
-
-
TYP
-
-
-
-
-
-
0.15
7.0
16
65
47
28
70
14
56
1100
550
250
5.0
MAX
-
-4.0
-25
-250
-
±100
0.20
-
20
100
70
90
90
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
GS
= -10V, I
D
= -19A, V
DS
= 0.8 x Rated BV
DSS
,
I
g (REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz
(Figure 10)
-
-
-
-
-
-
-
Internal Source Inductance
L
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1
30
o
C/W
o
C/W
5-15
IRF9140
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
-19
-76
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -19A, V
GS
= 0V
T
J
= 150
o
C, I
SD
= 19A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= -19A, dI
SD
/dt = 100A/µs
-
-
-
-
170
0.8
-1.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 4µH, R
G
= 25Ω, peak I
AS
= 19A. See Figures 15, 16.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
-20
I
D,
DRAIN CURRENT (A)
-15
0.8
0.6
0.4
-10
-5
0.2
0.0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
0
0
50
100
150
T
C,
CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
Z
θJC,
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-4
10
-3
10
-2
0.1
1
10
0.01
10
-5
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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