PD- 93766
IRF840LCS
IRF840LCL
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
GS
Rating
Reduced C
ISS
, C
OSS
, C
RSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
D
V
DSS
= 500V
G
S
R
DS(on)
= 0.85Ω
I
D
= 8.0A
Description
This new series of low charge HEXFET
®
power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
transistor standard for switching applications.
D
2
Pak
IRF840LCS
TO-262
IRF840LCL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
8.0
5.1
28
3.1
125
1.0
± 30
510
8.0
13
3.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.0
40
Units
°C/W
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1
1/3/2000
IRF840LCS/LCL
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient –––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
2.0
g
fs
Forward Transconductance
4.0
–––
I
DSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
I
GSS
Gate-to-Source Reverse Leakage
–––
Q
g
Total Gate Charge
–––
Q
gs
Gate-to-Source Charge
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
t
d(on)
Turn-On Delay Time
–––
t
r
Rise Time
–––
t
d(off)
Turn-Off Delay Time
–––
t
f
Fall Time
–––
L
S
C
iss
C
oss
C
rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
Typ.
–––
0.63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
25
27
19
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.85
Ω
V
GS
= 10V, I
D
= 4.8A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 4.8A
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
39
I
D
= 8.0A
10
nC V
DS
= 400V
19
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 8.0A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 30Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
1100 –––
V
GS
= 0V
170 –––
pF
V
DS
= 25V
18 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
8.0
––– –––
showing the
A
G
integral reverse
28
––– –––
S
p-n junction diode.
––– ––– 2.0
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
––– 490 740
ns
T
J
= 25°C, I
F
= 8.0A
––– 3.0 4.5
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF840LC data and test conditions
Starting T
J
= 25°C, L = 14mH
R
G
= 25Ω, I
AS
= 8.0A. (See Figure 12)
I
SD
≤
8.0A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended soldering techniques refer to application note #AN-994.
2
www.irf.com
IRF840LCS/LCL
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF840LCS/LCL
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
4
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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IRF840LCS/LCL
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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