PD- 91900A
SMPS MOSFET
IRF840A
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified (See AN1001)
V
DSS
500V
Rds(on) max
0.85Ω
I
D
8.0A
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
8.0
5.1
32
125
1.0
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l
l
l
Two Transistor Forward
Haft Bridge
Full Bridge
1
7/7/99
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IRF840A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
–––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
2.0
–––
I
DSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
I
GSS
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.58
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.85
Ω
V
GS
= 10V, I
D
= 4.8A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
3.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
11
23
26
19
1018
155
8.0
1490
42
56
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 4.8A
38
I
D
= 8.0A
9.0
nC V
DS
= 400V
18
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 8.0A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 31Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
510
8.0
13
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.50
Max.
1.0
–––
62
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
8.0
––– –––
showing the
A
G
integral reverse
––– –––
32
S
p-n junction diode.
––– ––– 2.0
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
––– 422 633
ns
T
J
= 25°C, I
F
= 8.0A
––– 2.0 3.0
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRF840A
100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
1
1
4.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
8.0
I
D
= 7.4A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
10
T
J
= 150
°
C
2.0
T
J
= 25
°
C
1
1.5
1.0
0.5
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF840A
100000
20
V
GS
, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
8.0
I
D
= 7.4 A
16
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance(pF)
1000
Ciss
12
100
Coss
8
10
Crss
4
1
1
10
100
1000
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
10us
10
T
J
= 150
°
C
I
D
, Drain Current (A)
10
100us
1ms
1
10ms
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF840A
8.0
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
6.0
R
G
-
V
DD
10V
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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