PD - 94279
IRF7822
HEXFET
®
Power MOSFET for DC-DC Converters
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
S
S
1
8
7
A
D
D
D
D
2
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
S
G
3
6
4
5
SO-8
T o p V ie w
DEVICE CHARACTERISTICSU
IRF7822
R
DS
(on)
Q
G
Q
sw
Q
oss
5.0mΩ
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain CurrentQ
Power Dissipation
T
A
= 25°C
T
A
= 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source CurrentQ
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
40
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
A
= 70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7822
30
±12
18
13
150
3.1
3.0
–55 to 150
3.8
150
°C
A
W
A
Units
V
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1
07/11/01
IRF7822
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
1.0
30
150
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
t
f
C
iss
C
oss
–
–
–
(off)
Min
30
Typ
–
5.0
Max
–
6.5
Units
V
m
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 15AR
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
V
GS
= ±12V
V
GS
=5.0V, I
D
=15A, V
DS
=16V
V
GS
= 5.0V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Current*
µA
nA
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
±100
44
38
13
3.0
9.0
12
27
1.5
15
5.5
22
12
5500
1000
300
–
–
–
60
nC
V
DS
= 16V, V
GS
= 0
Ω
V
DD
= 16V, I
D
= 15A
ns
V
GS
= 5.0V
Clamped Inductive Load
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
ChargeT
Reverse Recovery
Charge (with Parallel
Schottky)T
V
SD
Q
rr
Q
rr(s)
120
Min
Typ
Max
1.0
Units
V
nC
Conditions
I
S
= 15AR, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
108
nC
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
Q
Repetitive rating; pulse width limited by max. junction temperature.
R
Pulse width
≤
400 µs; duty cycle
≤
2%.
S
When mounted on 1 inch square copper board
T
Typ = measured - Q
oss
U
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
2
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IRF7822
2.0
I
D
= 15A
6
I
D
=
15A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
V
DS
= 24V
5
1.5
V
GS
, Gate-to-Source Voltage (V)
4
1.0
2
0.5
1
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
0
0
10
20
30
40
50
T
J
, Junction Temperature (
°
C)
Q
G
, Total Gate Charge (nC)
Fig 1.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Gate Charge Vs.
Gate-to-Source Voltage
R DS(on) , Drain-to -Source On Resistance (
Ω
)
0.010
0.009
0.008
0.007
0.006
0.005
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
C, Capacitance(pF)
10000
ID = 15A
Ciss
1000
Coss
Crss
0.004
0.003
3.0
4.0
5.0
6.0
7.0
100
1
10
100
VGS, Gate -to -Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs.
Drain-to-Source Voltage
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3
IRF7822
100.00
100
ID, Drain-to-Source Current
(Α
)
I
SD
, Reverse Drain Current (A)
T J = 175°C
10
T
J
= 150
°
C
10.00
T J = 25°C
T
J
= 25
°
C
1
1.00
1.0
2.0
VDS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
0.1
0.2
0.5
0.7
V
GS
= 0 V
1.0
1.2
VGS, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
(Z
thJA
)
10
0.20
0.10
0.05
Thermal Response
1
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJA
P
DM
t
1
t
2
+T
A
10
100
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7822
SO-8 Package Details
D
-B -
D IM
5
IN C H E S
M IN
.0532
.0040
.014
.0 075
.1 89
.150
MAX
.0688
.0098
.018
.0 098
.1 96
.157
M IL LIM E T E R S
M IN
1 .35
0 .10
0 .36
0 .19
4 .80
3 .81
M AX
1 .75
0 .25
0 .46
0.25
4.98
3 .99
A
6
5
H
0.2 5 (.0 10 )
M
A M
5
8
E
-A -
7
A1
B
C
D
E
e
e1
H
K
0 .10 (.00 4)
L
8X
6
C
8X
1
2
3
4
e
6X
e1
A
θ
θ
K x 45 °
.050 B A S IC
.025 B A S IC
.2 284
.011
0 .16
0°
.2 440
.019
.050
8°
1.2 7 B A S IC
0.6 35 B A S IC
5 .80
0 .28
0 .41
0°
6.20
0 .48
1.27
8°
-C-
B 8X
0 .25 (.01 0)
A1
M C A S B S
L
θ
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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5
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