CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Features
■
High BV
CEO
: 70 V Minimum (CNY17XM, CNY17FXM,
■
■
■
Description
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
■
MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Package Outlines
Applications
■
Power Supply Regulators
■
Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Figure 1. Package Outlines
Schematics
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
Figure 2. Schematics
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–IV
55/100/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option TV, 0.4" Lead Spacing)
Value
1360
1594
850
6000
≥
7
≥
7
≥
10
≥
0.5
175
350
800
> 10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
Ω
V
PR
V
IORM
V
IOTM
DTI
T
S
I
S,INPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature
(1)
Input Current
(1)
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
P
S,OUTPUT
Output Power
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
2
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
A
T
J
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
I
C
V
CEO
V
ECO
P
D
Storage Temperature
Parameters
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
270
2.94
60
6
1.5
120
1.41
50
70
7
150
1.76
Units
°C
°C
ºC
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
V
V
mW
mW/°C
Ambient Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
Continuous Collector Current
Collector-Emitter Voltage
Emitter Collector Voltage
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
3
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
I
F
= 10 mA
V
F
C
J
I
R
Input Forward Voltage
Capacitance
Reverse Leakage
Current
Breakdown Voltage
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
Collector-to-Emitter
Collector-to-Base
Emitter-to-Collector
Leakage Current
Collector-to-Emitter
Collector-to-Base
Capacitance
Collector-to-Emitter
Collector-to-Base
Emitter-to-Base
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
I
C
= 1 mA, I
F
= 0
I
C
= 10 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
I
F
= 60 mA
V
F
= 0 V, f = 1.0 MHz
V
R
= 6 V
Device
All Devices
CNY17XM,
CNY17FXM
All Devices
All Devices
Min.
1.0
1.0
Typ.
1.15
1.35
18
0.001
Max.
1.50
1.65
Units
V
V
pF
10
µA
DETECTOR
All Devices
CNY17XM
All Devices
All Devices
CNY17XM
All Devices
CNY17XM
CNY17XM
8
20
10
70
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
pF
pF
Transfer Characteristics
Symbol
COUPLED
I
F
= 10 mA, V
CE
= 10 V
CTR
Current Transfer
Ratio
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
V
CE(SAT)
Collector-Emitter I
C
= 0.5 mA, I
F
= 5 mA
Saturation Voltage I
C
= 2.5 mA, I
F
= 10 mA
MOC8106M
CNY171M, CNY17F1M
CNY172M, CNY17F2M
CNY173M, CNY17F3M
CNY174M, CNY17F4M
MOC8106M
CNY17XM/CNY17FXM
50
40
63
100
160
150
80
125
200
320
0.4
%
%
%
%
%
V
Parameters
Test Conditions
Device
Min.
Typ.
Max. Units
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
4
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics
(Continued)
T
A
= 25°C unless otherwise specified.
AC Characteristics
Symbol
t
on
t
off
t
d
t
r
t
s
t
f
Parameters
Turn-On Time
Turn-Off Time
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ
Device
All Devices
All Devices
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
Min.
Typ.
2.0
3.0
Max. Units
10.0
10.0
5.6
4.0
4.1
3.5
5.5
8.0
4.0
6.0
34.0
39.0
20.0
24.0
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
NON-SATURATED SWITCHING TIME
SATURATED SWITCHING TIMES
t
d
Delay Time
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ
t
r
Rise Time
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ
t
s
Storage Time
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ
t
f
Fall Time
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
Isolation Characteristics
Symbol
V
ISO
C
ISO
R
ISO
Characteristic
Isolation Capacitance
Isolation Resistance
Test Conditions
V
I-O
= 0 V, f = 1 MHz
V
I-O
= ±500 VDC, T
A
= 25°C
Min.
4170
Typ.
0.2
Max.
Units
VAC
RMS
pF
Ω
Input-Output Isolation Voltage t = 1 Minute
10
11
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
5
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