Datasheet> 器件分类 > 存储> 存储> IS62LV256-70J

文档预览

IS62LV256-70J: 产品描述Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28; 产品类别存储存储; 文件大小63KB，共8页; 制造商Integrated Silicon Solution ( ISSI )

下载文档详细参数选型对比全文预览

IS62LV256-70J概述

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

IS62LV256-70J规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	SOJ
包装说明	0.300 INCH, PLASTIC, SOJ-28
针数	28
Reach Compliance Code	compliant
ECCN代码	EAR99
最长访问时间	70 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-J28
JESD-609代码	e0
长度	18.415 mm
内存密度	262144 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
输出特性	3-STATE
可输出	YES
封装主体材料	PLASTIC/EPOXY
封装代码	SOJ
封装等效代码	SOJ28,.34
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3 V
认证状态	Not Qualified
座面最大高度	3.556 mm
最大待机电流	0.00006 A
最小待机电流	3.13 V
最大压摆率	0.03 mA
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	J BEND
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	7.62 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

IS62LV256

32K x 8 LOW VOLTAGE STATIC RAM

FEATURES

• Access time: 45, 70 ns

• Low active power: 70 mW

• Low standby power

— 45 µW CMOS standby

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 3.3V power supply

ISSI

DESCRIPTION

JANUARY 2000

The

ISSI

IS62LV256 is a very high-speed, low power,

32,768-word by 8-bit static RAM. It is fabricated using

ISSI

high-performance CMOS double-metal technology.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation is reduced to

10 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW

Chip Enable (CE) input and an active LOW Output Enable

(OE) input. The active LOW Write Enable (WE) controls both

writing and reading of the memory.

The IS62LV256 is pin compatible with other 32K x 8 SRAMs

in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and

TSOP (Type I) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

256 X 1024

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. I

01/26/00

IS62LV256-70J相似产品对比

	IS62LV256-70J	IS62LV256-70JI	IS62LV256-45N	IS62LV256-70N	IS62LV256-70TI
描述	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, TSOP1-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	SOJ	SOJ	DIP	DIP	TSOP
包装说明	0.300 INCH, PLASTIC, SOJ-28	0.300 INCH, PLASTIC, SOJ-28	0.300 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, DIP-28	TSOP1-28
针数	28	28	28	28	28
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	70 ns	70 ns	45 ns	70 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J28	R-PDSO-J28	R-PDIP-T28	R-PDIP-T28	R-PDSO-G28
JESD-609代码	e0	e0	e0	e0	e0
长度	18.415 mm	18.161 mm	35.306 mm	35.306 mm	11.8 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8
功能数量	1	1	1	1	1
端口数量	1	1	1	1	1
端子数量	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	70 °C	85 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	SOJ	DIP	DIP	TSOP1
封装等效代码	SOJ28,.34	SOJ28,.34	DIP28,.3	DIP28,.3	TSSOP28,.53,22
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.556 mm	3.556 mm	4.572 mm	4.572 mm	1.2 mm
最大待机电流	0.00006 A	0.0002 A	0.00006 A	0.00006 A	0.0002 A
最小待机电流	3.13 V	3.13 V	3.13 V	3.13 V	3.14 V
最大压摆率	0.03 mA	0.04 mA	0.035 mA	0.03 mA	0.04 mA
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	NO	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	J BEND	J BEND	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子节距	1.27 mm	1.27 mm	2.54 mm	2.54 mm	0.55 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30
宽度	7.62 mm	7.62 mm	7.62 mm	7.62 mm	8 mm
是否无铅	含铅	含铅	-	-	含铅
Base Number Matches	1	1	1	1	-

IS62LV256-70J

IS62LV256-70J概述

IS62LV256-70J规格参数

文档预览

IS62LV256-70J相似产品对比

推荐资源