PD - 93848A
IRF7750
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
TSSOP-8
V
DSS
= -20V
R
DS(on)
= 0.030Ω
Description
HEXFET
®
power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for,
provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
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1
5/25/2000
IRF7750
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.45
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.030
V
GS
= -4.5V, I
D
= -4.7A
Ω
––– 0.055
V
GS
= -2.5V, I
D
= -3.8A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -4.7A
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
26
39
I
D
= -4.7A
3.9 5.8
nC V
DS
= -16V
8.0
12
V
GS
= -5.0V
15 –––
V
DD
= -10V
54 –––
I
D
= -1.0A
ns
180 –––
R
D
= 10Ω
210 –––
R
G
= 24Ω
1700 –––
V
GS
= 0V
380 –––
pF
V
DS
= -15V
270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
26
16
-1.0
A
-38
-1.2
39
24
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7750
1000
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
10
-1.50V
1
1
-1.50V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
-I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
10
T
J
= 150
°
C
1
T
J
= 25
°
C
1
1.5
V DS = -15V
20µs PULSE WIDTH
2.0
2.5
3.0
0.1
0.2
0.4
0.6
0.8
V
GS
= 0 V
1.0
1.2
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7750
2500
2000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
10
I
D
=
-4.7A
V
DS
=-16V
8
C, Capacitance (pF)
C
iss
1500
6
1000
4
500
C
oss
C
rss
2
0
1
10
100
0
0
10
20
30
40
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1.00
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-V GS(th) , Variace ( V )
-I
D
, Drain Current (A)
I
0.80
100
10us
10
100us
1ms
1
10ms
0.60
ID = -250µA
0.40
0.20
-75
-50
-25
0
25
50
75
100 125
150
0.1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
T J , Temperature ( °C )
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Threshold Voltage Vs. Temperature
Fig 8.
Maximum Safe Operating Area
4
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IRF7750
5.0
20
4.0
16
-I
D
, Drain Current (A)
2.0
Power (W)
25
50
75
100
125
150
3.0
12
8
1.0
4
0.0
0
0.01
0.10
1.00
10.00
100.00
T
C
, Case Temperature ( °C)
Time (sec)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Typical Power Vs. Time
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
P
DM
t
1
t
2
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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