PD - 93940
IRF7701
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
V
DSS
-12V
R
DS(on)
max
0.011@V
GS
= -4.5V
0.015@V
GS
= -2.5V
0.022@V
GS
= -1.8V
I
D
-10A
-8.5A
-7.0A
Description
HEXFET
®
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides thedesigner
1
2
3
4
1=
2=
3=
4=
D
S
S
G
D
8
7
G
6
S
8=
7=
6=
5=
D
S
S
D
5
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
±10
±8.0
±80
1.5
0.96
12
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
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1
6/21/00
IRF7701
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-12
–––
–––
–––
–––
-0.45
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.006 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.011
V
GS
= -4.5V, I
D
= -10A
Ω
––– 0.015
V
GS
= -2.5V, I
D
= -8.5A
––– 0.022
V
GS
= -1.8V, I
D
= -7.0A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -10A
––– 1.0
V
DS
= -12V, V
GS
= 0V
µA
––– -25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -8.0V
nA
––– 100
V
GS
= 8.0V
69 100
I
D
= -8.0A
9.1
14
nC
V
DS
= -9.6V
21
32
V
GS
= -4.5V
19 –––
V
DD
= -6.0V
ns
20 –––
I
D
= -1.0A
240 –––
R
D
= 6.0Ω
220 –––
V
GS
= -4.5V
5050 –––
V
GS
= 0V
1520 –––
pF
V
DS
= -10V
1120 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
52
53
-1.5
A
-80
-1.2
78
80
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7701
100
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
10
1
-1.0V
1
0.1
-1.0V
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
-I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= -10A
1.5
10
1.0
1
0.5
0.1
1.0
V DS = -10V
20µs PULSE WIDTH
1.5
2.0
2.5
3.0
-V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7701
8000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
10
I
D
= -10A
V
DS
= -9.6V
-V
GS
, Gate-to-Source Voltage (V)
8
6000
C, Capacitance(pF)
Ciss
6
4000
4
Coss
2000
Crss
2
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
-V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
10
-I
D
, Drain Current (A)
I
100
100us
T
J
= 25
°
C
1
1ms
10
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7701
10.0
V
DS
8.0
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
6.0
V
GS
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0.0
25
50
75
100
125
150
V
GS
10%
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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