PD- 91647C
IRF7523D1
FETKY
™
MOSFET / Schottky Diode
q
q
q
q
q
Co-packaged HEXFET
®
Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
Micro8
TM
Footprint
A
A
S
G
1
8
K
K
D
D
V
DSS
= 30V
R
DS(on)
= 0.11Ω
Schottky Vf = 0.39V
2
7
3
6
4
5
Description
T op V ie w
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
TM
package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
TM
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum
2.7
2.1
21
1.25
0.8
10
± 20
6.2
-55 to +150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Maximum
100
Units
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
SD
≤
1.7A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/17/99
IRF7523D1
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
—
—
1.0
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
—
—
V
V
GS
= 0V, I
D
= 250µA
0.090 0.130
V
GS
= 10V, I
D
= 1.7A
Ω
0.140 0.190
V
GS
= 4.5V, I
D
= 0.85A
—
—
V
V
DS
= V
GS
, I
D
= 250µA
—
—
S
V
DS
= 10V, I
D
= 0.85A
—
1.0
V
DS
= 24V, V
GS
= 0V
µA
—
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
— -100
V
GS
= -20V
nA
—
100
V
GS
= 20V
7.8
12
I
D
= 1.7A
1.2 1.8
nC V
DS
= 24V
2.5 3.8
V
GS
= 10V (see figure 6)
4.7
—
V
DD
= 15V
10
—
I
D
= 1.7A
ns
12
—
R
G
= 6.1Ω
5.3
—
R
D
= 8.7Ω
210 —
V
GS
= 0V
80
—
pF
V
DS
= 25V
32
—
ƒ = 1.0MHz (see figure 5)
Conditions
2
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current (Body Diode) —
—
1.25
A
I
SM
Pulsed Source Current (Body Diode)
—
—
21
V
SD
Body Diode Forward Voltage
—
—
1.2
V
t
rr
Reverse Recovery Time (Body Diode) — 40
60
ns
Q
rr
Reverse Recovery Charge
— 48
72
nC
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
Conditions
1.9
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
A
1.3
T
A
= 70°C
See Fig.14
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/ µs
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 30V T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
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2
Power Mosfet Characteristics
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
IRF7523D1
100
I D , D rain-to-S ource C urrent (A )
I D, D rain-to-S ource C urrent (A )
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
1
1
3.0V
0.1
0.1
1
20µ s P U LS E W ID TH
T
J
= 25°C
A
10
0.1
0.1
1
20µ s P U LS E W ID TH
T
J
= 150°C
A
10
V D S , D rain-to-S ource V oltage (V )
V D S, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, D ra in -to-S o urc e C urren t (A )
T
J
= 2 5 °C
10
I
S D
, R everse D rain C urrent (A )
10
T
J
= 1 5 0 °C
T
J
= 150 °C
T
J
= 25°C
1
1
0.1
3.0
3.5
4.0
4.5
V
DS
= 10V
2 0 µ s P U L S E W ID T H
5.0
5.5
6.0
A
0.1
0.4
0.8
1.2
1.6
V
G S
= 0V
A
2.0
V
G S
, G a te -to -S o u rc e V o lta g e (V )
V
S D
, S ource-to-D rain V oltage (V )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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IRF7523D1
Power Mosfet Characteristics
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2.0
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 1.7A
0.3
1.5
VGS = 10V
0.2
1.0
0.1
0.5
VGS = 4.5V
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10V
100 120
140 160
A
0.0
0
2
4
6
8
A
T
J
, Junction T em perature (°C )
I
,
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.16
100
R
DS
(on) , Drain-to-Source On Resistance (Ω)
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (on)
0.14
I
D
, D rain C urrent (A )
10
10µ s
0.12
100µ s
I
0.10
= 2.7A
1
1m s
0.08
0.06
2
6
10
14
A
0.1
1
T
A
= 25°C
T
J
= 150°C
S ingle P ulse
10
10m s
A
100
V
/5
, Gate-to-Source Voltage (V)
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7523D1
Power Mosfet Characteristics
400
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
20
I
D
= 1.7A
V
D S
= 24V
V
D S
= 15V
16
C , C apacitanc e (pF )
300
C
is s
C
oss
12
200
8
100
C
rs s
4
0
1
10
100
A
0
0
2
4
6
FO R TE S T C IR C U IT
S E E FIG U R E 9
8
10
12
A
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
Thermal Response (Z
thJC
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
P
DM
t
1
t
2
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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