PD- 95276
SMPS MOSFET
Applications
l
High Frequency DC-DC Converters
with Synchronous Rectification
l
Lead-Free
Benefits
l
l
l
IRF7470PbF
HEXFET
®
Power MOSFET
V
DSS
40V
R
DS(on)
max
13mΩ
I
D
10A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 12
10
8.5
85
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
8/11/04
IRF7470PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
40
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.8
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
–––
––– V
0.04 ––– V/°C
9.0
13
10
15 mΩ
14.5
30
–––
2.0
V
–––
20
µA
–––
100
–––
200
nA
–––
-200
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.0A
V
GS
= 2.8V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125C
V
GS
= 12V
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
29
7.9
8.0
23
10
1.9
21
3.2
3430
690
41
Max. Units
Conditions
–––
S
V
DS
= 20V, I
D
= 8.0A
44
I
D
= 8.0A
12
nC V
DS
= 20V
12
V
GS
= 4.5V
35
V
GS
= 0V, V
DS
= 16V
–––
V
DD
= 20V
–––
I
D
= 8.0A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 20V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
300
8.0
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
2.3
A
85
1.3
–––
110
200
110
230
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.80
––– 0.65
––– 72
––– 130
––– 76
––– 150
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
R
= 20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 8.0A, V
R
=20V
di/dt = 100A/µs
2
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IRF7470PbF
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
100
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
2.0V
10
10
2.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 10A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
10
1.5
1.0
0.5
1
2.0
V DS = 25V
20µs PULSE WIDTH
2.2
2.4
2.6
2.8
3.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7470PbF
100000
10
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
8.0A
V
DS
= 32V
V
DS
= 20V
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
2
Crss
10
1
10
100
0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
10
I
D
, Drain Current (A)
100
10us
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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Fig 6.
On-Resistance Vs. Drain Current
IRF7470PbF
10.0
V
DS
8.0
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
-
V
DD
6.0
10V
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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