PD-95274
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
IRF7465PbF
HEXFET
®
Power MOSFET
R
DS(on)
max
0.28
W
@V
GS
= 10V
I
D
1.9A
V
DSS
150V
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.9
1.5
15
2.5
0.02
± 30
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
09/21/04
IRF7465PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.19
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.28
Ω
V
GS
= 10V, I
D
= 1.14A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
0.75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
10
2.7
5.0
7.0
1.2
10
9.0
330
80
16
420
41
76
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 1.14A
15
I
D
= 1.14A
4.0
nC V
DS
= 120V
7.5
V
GS
= 10V
–––
V
DD
= 75V
–––
I
D
= 1.14A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
40
1.9
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
62
160
2.3
A
15
1.3
93
240
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.14A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.14A
di/dt = 100A/µs
D
S
2
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IRF7465PbF
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
6.0V
1
1
6.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 1.9A
I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 150
°
C
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
6.0
V DS = 25V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7465PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
20
I
D
=
1.14A
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
V
GS
, Gate-to-Source Voltage (V)
16
1000
C, Capacitance(pF)
Ciss
100
12
Coss
Crss
8
10
4
1
1
10
100
1000
0
0
4
8
12
16
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
100µsec
1
1msec
T A = 25°C
T J = 150°C
0.1
Single Pulse
1
10
100
1000
10msec
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7465PbF
2.0
V
DS
V
GS
R
D
I
D
, Drain Current (A)
1.5
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
1.0
0.5
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
10
1
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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