PD- 95032
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
l
IRF7457PbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
7.0mΩ
I
D
15A
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
1
2
3
4
8
7
Benefits
l
Ultra-Low R
DS(on)
l
Very Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
10/12/04
IRF7457PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.023
5.5
8.0
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
7.0
V
GS
= 10V, I
D
= 15A
mΩ
10.5
V
GS
= 4.5V, I
D
= 12A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
28
11
10
25
14
16
16
7.5
3100
1600
270
Max. Units
Conditions
–––
S
V
DS
= 16V, I
D
= 12A
42
I
D
= 12A
17
nC
V
DS
= 10V
15
V
GS
= 4.5V,
38
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V,
–––
I
D
= 12A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
265
15
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
2.5
A
120
1.3
–––
75
105
75
110
V
ns
nC
ns
nC
––– 0.8
––– 0.67
––– 50
––– 70
––– 50
––– 74
V
SD
t
rr
Q
rr
t
rr
Q
rr
2
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 125°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
R
= 15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 12A, V
R
=15V
di/dt = 100A/µs
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IRF7457PbF
1000
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
2.7V
10
10
2.7V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
1
0.1
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
I
D
, Drain-to-Source Current (A)
100
1.5
T
J
= 150
°
C
10
1.0
T
J
= 25
°
C
1
0.5
0.1
2.5
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7457PbF
5000
4000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
12A
V
DS
= 10V
8
C, Capacitance (pF)
3000
Ciss
6
2000
Coss
4
1000
2
Crss
0
1
10
100
0
0
10
20
30
40
50
60
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
T
J
= 150
°
C
10
10us
100
100us
T
J
= 25
°
C
1
1ms
10
10ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
V
SD
,Source-to-Drain Voltage (V)
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7457PbF
16
V
DS
V
GS
R
D
13
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
10
6
Fig 10a.
Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
t
2
0.01
0.00001
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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