PD- 93899A
SMPS MOSFET
Applications
l
High frequency DC-DC converters
IRF7453
HEXFET
®
Power MOSFET
R
DS(on)
max
0.23
Ω
@V
GS
= 10V
I
D
2.2A
V
DSS
250V
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.2
1.7
17
2.5
0.02
± 30
13
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
2/1/01
IRF7453
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
250
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.33
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.23
Ω
V
GS
= 10V, I
D
= 1.3A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 250V, V
GS
= 0V
µA
250
V
DS
= 200V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 24V
nA
-100
V
GS
= -24V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
1.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
25
6.0
11
9.0
2.5
19
20
930
130
23
1050
52
96
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 1.3A
38
I
D
= 1.3A
9.0
nC V
DS
= 200V
17
V
GS
= 10V,
–––
V
DD
= 125V
–––
I
D
= 1.3A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 200V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 200V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
200
2.2
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
98
340
2.3
A
17
1.3
150
510
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.3A
di/dt = 100A/µs
D
S
2
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IRF7453
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
1
5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.2A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 150
°
C
10
2.0
1.5
1
T
J
= 25
°
C
1.0
0.5
0.1
5.0
V DS = 50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
7.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7453
10000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 1.3A
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
1000
Ciss
Coss
Crss
12
8
100
4
10
1
10
100
1000
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
ID, Drain-to-Source Current (A)
10
T
J
= 150
°
C
100µsec
1
T A = 25°C
T J = 150°C
Single Pulse
1
10
100
10msec
1000
1
1msec
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7453
2.5
V
DS
2.0
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
1.5
10V
1.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
0.5
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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