PD- 92004
SMPS MOSFET
IRF740A
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss specified ( See AN 1001)
V
DSS
400V
Rds(on) max
0.55Ω
I
D
10A
TO-220AB
GDS
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
10
6.3
40
125
1.0
± 30
5.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l
l
Single transistor Flyback Xfmr. Reset
Single Transistor Forward Xfmr. Reset
( Both for US Line Input only )
through
are on page 8
Notes
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1
9/14/99
IRF740A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
400
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.48
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
–––
V/°C Reference to 25°C, I
D
= 1mA
0.55
Ω
V
GS
= 10V, I
D
= 6.0A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 400V, V
GS
= 0V
µA
250
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
4.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
10
35
24
22
1030
170
7.7
1490
52
61
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 6.0A
36
I
D
= 10A
9.9
nC
V
DS
= 320V
16
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 200V
–––
I
D
= 10A
ns
–––
R
G
= 10Ω
–––
R
D
= 19.5Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 320V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 320V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
630
10
12.5
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
10
––– –––
showing the
A
G
integral reverse
––– –––
40
S
p-n junction diode.
––– ––– 2.0
V
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
––– 240 360
ns
T
J
= 25°C, I
F
= 10A
––– 1.9 2.9
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRF740A
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
1
1
0.1
4.5V
4.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
= 10A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
10
2.0
T
J
= 150
°
C
1.5
1
1.0
T
J
= 25
°
C
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.5
0.1
4.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF740A
20
100000
I
D
= 10A
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
V
GS
, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
16
C, Capacitance(pF)
1000
Ciss
12
100
Coss
8
10
Crss
4
1
1
10
100
1000
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
10us
10
I
D
, Drain Current (A)
T
J
= 150
°
C
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF740A
10.0
V
DS
V
GS
R
D
8.0
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
6.0
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4.0
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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