PD - 95266
IRF7331PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
V
DSS
20V
R
DS(on)
max (mW)
30@V
GS
= 4.5V
45@V
GS
= 2.5V
I
D
7.0A
5.6A
These N-Channel
HEXFET
®
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
7.0
5.5
28
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
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1
05/18/04
IRF7331PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.6
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.013
–––
–––
–––
–––
–––
–––
–––
–––
13
3.7
2.1
7.6
22
110
50
1340
170
120
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
30
V
GS
= 4.5V, I
D
= 7.0A
mΩ
45
V
GS
= 2.5V, I
D
= 5.6A
1.2
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 7.0A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
20
I
D
= 7.0A
–––
nC
V
DS
= 10V
–––
V
GS
= 4.5V
–––
V
DD
= 10V
–––
I
D
= 1.0A
ns
–––
R
G
= 53Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= 16V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
31
15
2.0
A
28
1.2
47
23
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7331PbF
1000
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
100
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
10
10
1.50V
1
1.50V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 7.0A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
1.5
1.0
0.5
1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7331PbF
2400
8
2000
Coss = C + C
ds gd
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
I
D
=
7.0A
V
DS
= 10V
6
C, Capacitance(pF)
1600
Ciss
1200
4
800
2
400
Coss
Crss
0
1
10
100
0
0
4
8
12
16
20
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
10
10
100µsec
T
J
= 150
°
C
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1
T
J
= 25
°
C
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
0.2
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7331PbF
8.0
V
DS
V
GS
R
D
I
D
, Drain Current (A)
6.0
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
4.0
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
P
DM
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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