Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
g
IRF730
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 400 V
I
D
= 7.2 A
R
DS(ON)
≤
1
Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF730 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
±
30
7.2
4.6
29
125
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
MIN.
-
MAX.
290
UNIT
mJ
Unclamped inductive load, I
AS
= 4.8 A;
t
p
= 0.23 ms; T
j
prior to avalanche = 25˚C;
V
DD
≤
50 V; R
GS
= 50
Ω;
V
GS
= 10 V; refer
to fig:17
Repetitive avalanche energy
1
I
AR
= 7.2 A; t
p
= 2.5
µs;
T
j
prior to
avalanche = 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
E
AR
I
AS
, I
AR
-
-
9.4
7.2
mJ
A
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
in free air
-
IRF730
TYP. MAX. UNIT
-
60
1
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Drain-source breakdown
voltage
∆V
(BR)DSS
/ Drain-source breakdown
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
V
(BR)DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 0.25 mA
MIN.
400
-
-
2.0
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.1
0.7
3.0
4
1
30
10
52
3
26
12
33
93
42
3.5
4.5
7.5
620
108
63
-
-
1
4.0
-
25
250
200
62
5
30
-
-
-
-
-
-
-
-
-
-
V
%/K
Ω
V
S
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
pF
pF
pF
V
GS
= 10 V; I
D
= 3.6 A
V
DS
= V
GS
; I
D
= 0.25 mA
V
DS
= 30 V; I
D
= 3.6 A
V
DS
= 400 V; V
GS
= 0 V
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 ˚C
Gate-source leakage current V
GS
=
±30
V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
I
D
= 7.2 A; V
DD
= 320 V; V
GS
= 10 V
V
DD
= 200 V; R
D
= 27
Ω;
R
G
= 12
Ω
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
T
mb
= 25˚C
T
mb
= 25˚C
I
S
= 7.2 A; V
GS
= 0 V
I
S
= 7.2 A; V
GS
= 0 V; dI/dt = 100 A/µs
MIN.
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
270
3.3
7.2
29
1.2
-
-
A
A
V
ns
µC
March 1999
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF730
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1
Zth j-mb, Transient thermal impedance (K/W)
D = 0.5
0.2
PHP3N60
0.1
0.1 0.05
0.02
0.01
single pulse
P
D
t
p
D=
t
p
T
t
T
0
20
40
60
80
100
Tmb / C
120
140
0.001
1us
10us
1ms
100us
10ms
tp, pulse width (s)
100ms
1s
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID%
Normalised Current Derating
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
ID, Drain current (Amps)
Tj = 25 C
PHP5N40
10 V
7V
15
6.5 V
6V
10
5.5 V
5V
5
VGS = 4.5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
20
0
20
40
60
80
Tmb / C
100
120
140
0
0
5
10
15
20
25
VDS, Drain-Source voltage (Volts)
30
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.5. Typical output characteristics.
I
D
= f(V
DS
); parameter V
GS
PHP5N40
Tj = 25 C
100
ID, Drain current (Amps)
PHP3N50
2.5
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
5V
5.5 V
VGS = 6 V
6.5 V
7V
10
RD
O
S(
N)
=
S
VD
/ID
tp = 10 us
2
10 V
1.5
100 us
1 ms
DC
10 ms
1
1
0.5
0.1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
0
0
5
10
ID, Drain current (Amps)
15
20
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance.
R
DS(ON)
= f(I
D
); parameter V
GS
March 1999
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF730
20
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 25 C
PHP5N40
4
VGS(TO) / V
max.
15
Tj = 150 C
10
3
typ.
min.
2
5
1
0
0
0
2
4
6
VGS, Gate-Source voltage (Volts)
8
10
-60
-40
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
gfs, Transconductance (S)
VDS > ID x RDS(on)max
6
5
150 C
4
3
2
Tj = 25 C
PHP5N40
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
ID / A
SUB-THRESHOLD CONDUCTION
7
1E-01
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1
0
1E-06
0
1
2
VGS / V
3
4
0
5
10
ID, Drain current (A)
15
20
Fig.8. Typical transconductance.
g
fs
= f(I
D
); parameter T
j
a
Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
1000
Junction capacitances (pF)
Ciss
PHP5N40
2
100
1
Coss
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
100 120 140
10
1
10
100
VDS, Drain-Source voltage (Volts)
1000
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 3.6 A; V
GS
= 10 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
March 1999
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF730
15
VGS, Gate-Source voltage (Volts)
ID = 7.2 A
Tj = 25 C
80 V
240 V
PHP5N40
20
IF, Source-Drain diode current (Amps)
VGS = 0 V
PHP5N40
VDD = 320 V
15
10
10
150 C
Tj = 25 C
5
5
0
0
10
20
30
40
50
Qg, Gate charge (nC)
60
70
80
0
0
0.2
0.4
0.6
0.8
1
VSDS, Source-Drain voltage (Volts)
1.2
1.4
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
PHP5N40
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
1000
Switching times (ns)
VDD = 200 V
VGS = 10 V
RD = 27 Ohms
Tj = 25 C
10
Non-repetitive Avalanche current, IAS (A)
25 C
Tj prior to avalanche = 125 C
100
td(off)
tf
tr
ID
1
VDS
tp
PHP7N40E
1E-05
1E-04
Avalanche time, tp (s)
1E-03
1E-02
10
td(on)
0
10
20
30
40
RG, Gate resistance (Ohms)
50
60
0.1
1E-06
Fig.14. Typical switching times; t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.17. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
p
);
unclamped inductive load
1.15
1.1
1.05
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
10
Maximum Repetitive Avalanche Current, IAR (A)
Tj prior to avalanche = 25 C
1
1
0.95
0.9
0.85
-100
125 C
0.1
PHP7N40E
0.01
1E-06
-50
0
50
Tj, Junction temperature (C)
100
150
1E-05
1E-04
Avalanche time, tp (s)
1E-03
1E-02
Fig.15. Normalised drain-source breakdown voltage;
V
(BR)DSS
/V
(BR)DSS 25 ˚C
= f(T
j
)
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
March 1999
5
Rev 1.000
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