PD - 96989
IRF6633
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q
g
tot
Q
gd
4.0nC
Q
gs2
1.2nC
Q
rr
32nC
Q
oss
8.8nC
V
gs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical R DS (on) (mΩ)
Max.
20
±20
16
13
59
132
41
13
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
8
ID= 13A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 16A
15
10
TJ = 125°C
5
TJ = 25°C
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 16V
VDS= 10V
12
16
20
24
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.51mH, R
G
= 25Ω, I
AS
= 13A.
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1
6/2/05
IRF6633
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.4
–––
–––
–––
–––
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
16
4.1
7.0
1.8
-5.2
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
31
12
4.3
1250
630
200
–––
–––
5.6
9.4
2.2
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 16A
c
V
GS
= 4.5V, I
D
= 13A
c
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 13A
V
DS
= 10V
V
mΩ
V
mV/°C
µA
nA
S
mV/°C Reference to 25°C, I
D
= 1mA
nC
V
GS
= 4.5V
I
D
= 13A
See Fig. 15
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 13A
Clamped Inductive Load
c
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
@T
C
=25°C (Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
18
32
1.0
27
48
V
ns
nC
–––
–––
132
Min.
–––
Typ. Max. Units
–––
52
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
c
T
J
= 25°C, I
F
= 13A
di/dt = 500A/µs
c
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
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IRF6633
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
f
Power Dissipation
Operating Junction and
Parameter
Max.
2.3
1.5
89
270
-40 to + 150
Units
W
Peak Soldering Temperature
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
g
Junction-to-Ambient
dg
Junction-to-Ambient
eg
Junction-to-Case
fg
Junction-to-Ambient
Linear Derating Factor
100
Parameter
Typ.
–––
12.5
20
–––
1.0
0.018
Max.
55
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Ã
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
C
τ
τ
5
Ri (°C/W)
0.6676
1.0462
1.5611
29.282
25.455
τi
(sec)
0.000066
0.000896
0.004386
0.68618
32
τ
1
τ
2
τ
3
τ
4
τ
5
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6633
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
0.1
1
≤60µs
PULSE WIDTH
Tj = 150°C
10
100
Fig 4.
Typical Output Characteristics
1000
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Output Characteristics
2.0
ID = 16A
VGS = 4.5V
VGS = 10V
1.5
ID, Drain-to-Source Current
(Α)
100
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
Typical RDS(on) (Normalized)
VDS = 10V
≤60µs
PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
1.0
1
0.1
1.5
2.0
2.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
20
TJ = 25°C
16
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
1000
Ciss
Coss
Typical RDS (on) (mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
12
8
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
4
0
20
40
60
80
100
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6633
1000.0
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
100
10.0
10
100µsec
1msec
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
100.0
0.1
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.5
60
50
ID, Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
TJ , Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
200
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
EAS, Single Pulse Avalanche Energy (mJ)
160
5.7A
8.7A
BOTTOM
13A
TOP
120
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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