CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Contact Modified MOSFET
Screw on Tab to Center of Symbol Showing the
Die
Internal Devices
Inductances
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
D
L
D
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±20V
I
D
= 8A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 8A (Figure 12)
V
DD
= 125V, I
D
≈
14A, R
GS
= 9.1Ω, R
L
= 8.6Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
MIN
275
2
-
-
14
-
-
6.7
-
-
-
-
TYP
-
-
-
-
-
-
0.200
10
16
67
53
49
39
6.6
20
1300
320
69
4.5
MAX
-
4
25
250
-
±100
0.280
-
24
100
80
74
59
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
-
-
-
-
7.5
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
G
L
S
S
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1
80
o
C/W
o
C/W
4-215
IRF646
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
G
D
MIN
-
-
TYP
-
-
MAX
14
56
UNITS
A
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
T
J
T
J
S
o
C, I
= 25
SD
= 14A, V
GS
= 0V (Figure 13)
o
C, I
= 25
SD
= 14A, dI
SD
/dt = 100A/µs
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs
-
150
1.6
-
300
3.4
1.8
640
7.2
V
ns
µC
2. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.5mH, R
G
= 25Ω, peak I
AS
= 14A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
15
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
12
9
6
3
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
Z
θJC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
P
DM
0.001
10
-5
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-4
10
-3
10
-2
10
-1
1
10
t
1
t
2
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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