IRF634
IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP
Mesh Overlay™ Power MOSFET
General features
Type
IRF634
IRF634FP
■
■
V
DSS
250V
250V
R
DS(on)
<0.45Ω
<0.45Ω
I
D
8A
8A
3
1
2
3
1
2
Extremely High dv/dt Capability
100% Avalanche Tested
TO-220
TO-220FP
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performance. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, makes it
suitable in coverters for lighting applications.
Internal schematic diagram
Applications
■
Switching application
Order codes
O
so
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IRF634
r
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s)
t(
bs
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et
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s)
t(
uc
Part number
Marking
IRF634
IRF634FP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
IRF634FP
June 2006
Rev 2
1/14
www.st.com
18
Contents
IRF634 - IRF634FP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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IRF634 - IRF634FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
IRF634
Value
IRF634FP
250
250
± 20
8
5
32
80
0.64
5
-
8
(1)
5
(1)
32
(1)
30
V
V
V
A
A
A
W
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
V
ISO
T
stg
T
j
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuos) at T
C
= 25°C
Drain current (continuos) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
I
SD
≤
8A, di/dt
≤
300 A/ms, V
DD
≤
V
(BR)DSS
, Tj
≤
T
jmax
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb
T
l
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
b
O
so
te
le
r
P
uc
od
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t(
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b
-O
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r
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–65 to 150
150
od
s)
t(
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0.24
2000
W/°C
V/ns
V
°C
°C
TO-220
1.56
62.5
300
TO-220FP
4.11
°C/W
°C/W
°C
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50 V)
Max value
8
300
Unit
A
mJ
3/14
Electrical characteristics
IRF634 - IRF634FP
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
Breakdown Voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating,
T
C
= 125 °C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4 A
2
3
Min.
250
1
10
±100
4
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
0.38
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(Voff)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off- delay time
Fall time
Test conditions
O
so
b
te
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Total gate charge
Gate-source charge
Gate-drain charge
uc
od
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t(
so
b
-O
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
et
l
P
e
7
Min.
od
r
8
s)
t(
uc
0.45
Max.
Typ.
Unit
S
pF
pF
770
118
48
13
18
51
16
37
5.2
14.8
51.8
V
DD
= 125V, I
D
= 4A
R
G
= 4.7Ω V
GS
= 10V
ns
ns
ns
ns
nC
nC
nC
V
DD
= 200V, I
D
= 8A,
V
GS
= 10V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
IRF634 - IRF634FP
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain Current
(pulsed
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 8A, di/dt = 100A/µs
V
DD
= 30V, T
j
= 150°C
I
SD
= 8 A, V
GS
= 0
198
1.1
11.3
Test conditions
Min.
Typ.
Max.
8
32
1.7
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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