CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the
Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
I
D
= 5A, V
GS
= 10V (Figure 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 5A (Figure 12)
V
DD
= 90V, I
D
≈
9A, R
GS
= 9.1Ω, V
GS
= 10V
R
L
= 9.6Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 9A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
MIN
200
2
-
-
9
-
-
3
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.25
4.8
-
-
-
-
19
10
9
600
250
80
3.5
MAX
-
4
25
250
-
±100
0.4
-
30
50
50
40
30
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
G
L
S
S
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.67
80
o
C/W
o
C/W
4-203
IRF630, RF1S630SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
9
36
UNITS
A
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
S
o
C, I
T
J
= 25
SD
= 9A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/µs
-
-
-
-
450
3
2
-
-
V
ns
µC
2. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[详细]
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
