Power MOSFETs
2SK3494
N-channel enhancement mode MOSFET
■
Features
•
Low on-resistance, low Q
g
•
High avalanche resistance
(1.4)
Unit: mm
10.5
±0.3
4.6
±0.2
1.4
±0.1
0.6
±0.1
3.0
±0.5
0 to 0.5
•
For PDP
•
For high-speed switching
1.4
±0.1
0.8
±0.1
2.54
±0.3
2.5
±0.2
0 to 0.3
■
Absolute Maximum Ratings
T
C
=
25°C
1
2
3
(10.2)
(8.9)
(6.4) (1.4)
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
*
Power dissipation
T
a
=
25°C
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
P
D
T
ch
T
stg
Rating
250
±30
20
80
657
50
1.4
150
−55
to
+150
Unit
V
V
A
A
mJ
W
(2.1)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3494
°C
°C
Note) *: L
=
2.79 mH, I
L
=
20 A, V
DD
=
50 V, 1 pulse, T
a
=
25°C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Drain-source surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V
DSS
V
th
I
DSS
I
GSS
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
T
r
t
d(off)
t
f
V
DD
≈
100 V, I
D
=
10 A
R
L
=
10
Ω,
V
GS
=
10 V
Conditions
I
D
=
1 mA, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
DS
=
200 V, V
GS
=
0
V
GS
= ±30
V, V
DS
=
0
V
GS
=
10 V, I
D
=
10 A
V
DS
=
10 V, I
D
=
10 A
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
7
82
14
2 450
356
40
36
20
184
29
Min
250
2.0
4.0
10
±1
105
Typ
Max
Unit
V
V
µA
µA
mΩ
S
pF
pF
pF
ns
ns
ns
ns
1.5
±0.3
■
Applications
10.1
±0.3
Publication date: March 2004
SJG00037AED
1
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(4) The products described in this material are intended to be used for standard applications or general elec-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
Any applications other than the standard applications intended.
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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