PD-93998A
IRF5851
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
N-Ch
G1
1
6
D1
P-Ch
-20V
S2
2
5
S1
V
DSS
20V
G2
3
4
D2
R
DS(on)
0.090Ω 0.135Ω
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and R
DS(on)
reduction enables an
increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
N-Channel
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
P-Channel
-20
-2.2
-1.7
-9.0
Units
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
130
Units
°C/W
www.irf.com
1
2/26/02
IRF5851
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
R
DS(ON)
Static Drain-to-Source On-Resistance
P-Ch
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
—
—
-20 —
—
— 0.016 —
— -0.011 —
—
— 0.090
—
— 0.120
—
— 0.135
—
— 0.220
0.60 — 1.25
-0.45 — -1.2
5.2 —
—
3.5 —
—
—
— 1.0
—
— -1.0
—
—
25
—
— -25
––
— ±100
— 4.0 6.0
— 3.6 5.4
— 0.95 —
— 0.66 —
— 0.83 —
— 5.7 —
— 6.6 —
— 8.3 —
— 1.2 —
—
14
—
—
15
—
—
31
—
— 2.4 —
—
28
—
— 400 —
— 320 —
—
48
—
—
56
—
—
32
—
—
40
—
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 2.7A
V
GS
= 2.5V, I
D
= 2.2A
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.5V, I
D
= -1.7A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 10V, I
D
= 2.7A
V
DS
= -10V, I
D
= -2.2A
V
DS
= 16 V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16 V, V
GS
= 0V, T
J
= 70°C
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
V
GS
= ± 12V
N-Channel
I
D
= 2.7A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -10V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.2Ω,
V
GS
= 4.5V
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0Ω,
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 0.96
—
— -0.96
A
—
—
11
—
— -9.0
—
— 1.2
T
J
= 25°C, I
S
= 0.96A, V
GS
= 0V
V
—
— -1.2
T
J
= 25°C, I
S
= -0.96A, V
GS
= 0V
—
25
38
N-Channel
ns
—
23
35
T
J
= 25°C, I
F
= 0.96A, di/dt = 100A/µs
— 6.5 9.8
nC
P-Channel
T
J
= 25°C, I
F
= -0.96A, di/dt = -100A/µs
— 7.7 12
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
2
www.irf.com
IRF5851
N-Channel
100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
10
10
1
1
1.50V
1.50V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.7A
I
D
, Drain-to-Source Current (A)
10
T
J
= 25
°
C
T
J
= 150
°
C
1.5
1.0
1
0.5
0.1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF5851
N-Channel
600
500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
2.7A
V
DS
= 16V
V
DS
= 10V
8
C, Capacitance (pF)
400
Ciss
6
300
4
200
100
2
0
Coss
Crss
1
10
100
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
10
10
100us
T
J
= 150
°
C
1
1
1ms
T
J
= 25
°
C
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
10ms
0.1
0.4
0.1
0.1
T
A
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
N-Channel
3.0
IRF5851
V
DS
R
D
2.5
I
D
, Drain Current (A)
V
GS
R
G
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
2.0
-
V
DD
1.5
1.0
Fig 10a.
Switching Time Test Circuit
0.5
V
DS
0.0
25
50
75
100
125
150
90%
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
t
2
1
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
