PD - 93850
IRF5800
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
D
1
6
A
D
V
DSS
= -30V
D
2
5
D
G
3
4
S
R
DS(on)
= 0.085Ω
T o p V ie w
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
®
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-4.0
-3.2
-32
2.0
1.3
0.016
20.6
± 20
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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1
2/8/00
IRF5800
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
11.4
2.3
2.2
11.4
11
24
14
535
94
68
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.085
V
GS
= -10V, I
D
= -4.0A
Ω
0.150
V
GS
= -4.5V, I
D
= -3.0A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -4.0A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-5.0
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
17
I
D
= -4.0A
–––
nC
V
DS
= -16V
–––
V
GS
= -10V
17
V
DD
= -15V, V
GS
= -10V
17
I
D
= -1.0A
ns
36
R
G
= 6.0Ω
20
R
D
= 15Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
19
16
-2.0
A
-32
-1.2
28
24
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t
≤
5sec.
Starting T
J
= 25°C, L = 2.5mH
R
G
= 25Ω, I
AS
= -4.0A. (See Fig 10 )
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF5800
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
10
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
1
1
-2.70V
0.1
-2.70V
0.1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
I
D
= -4.0A
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, Drain-to-Source Current (A)
1.5
10
1.0
1
0.5
0.1
2.0
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF5800
800
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -4.0A
V
DS
=-16V
600
16
C, Capacitance (pF)
Ciss
12
400
8
200
Coss
Crss
0
1
10
100
4
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
20
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
10us
10
100us
1ms
1
10ms
1
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
0.1
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF5800
4.0
50
E
AS
, Single Pulse Avalanche Energy (mJ)
40
3.0
ID
TOP
-1.8A
-2.5A
BOTTOM -4.0A
-I
D
, Drain Current (A)
30
2.0
20
1.0
10
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
P
DM
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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