PD - 94812
IRF540NPbF
HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
D
V
DSS
= 100V
R
DS(on)
= 44mΩ
G
S
I
D
= 33A
Description
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
33
23
110
130
0.87
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.15
–––
62
Units
°C/W
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1
11/3/03
IRF540NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
100 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 44
mΩ V
GS
= 10V, I
D
= 16A
2.0
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
21
––– –––
S
V
DS
= 50V, I
D
= 16A
––– ––– 25
V
DS
= 100V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
––– ––– 71
I
D
= 16A
––– ––– 14
nC V
DS
= 80V
––– –––
21
V
GS
= 10V, See Fig. 6 and 13
–––
11 –––
V
DD
= 50V
–––
35 –––
I
D
= 16A
ns
–––
39 –––
R
G
= 5.1Ω
–––
35 –––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
––– 1960 –––
V
GS
= 0V
––– 250 –––
V
DS
= 25V
–––
40 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 700 185
mJ I
AS
= 16A, L = 1.5mH
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
33
––– –––
showing the
A
G
integral reverse
––– ––– 110
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
––– 115 170
ns
T
J
= 25°C, I
F
= 16A
––– 505 760
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L =1.5mH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
I
SD
≤ 16A,
di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
2
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IRF540NPbF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 33A
I
D
, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
100
T
J
= 25
°
C
T
J
= 175
°
C
10
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF540NPbF
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 16A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
2000
Ciss
12
1500
8
1000
Coss
500
4
Crss
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
T
J
= 25
°
C
1
1
T A = 25°C
T J = 175°C
Single Pulse
1
10
100
10msec
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
0.1
V
SD
,Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF540NPbF
35
V
DS
30
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
25
20
15
10
5
0
-
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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