CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the Contact
Screw On Tab To Center of
Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 95V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±20V
I
D
= 5.6A, V
GS
= 10V (Figure 8, 9)
V
DS
≥
50V, I
D
= 5.6A (Figure 12)
V
DD
= 50V, I
D
≈
9.2A, R
G
= 18Ω, R
L
= 5.5Ω
MOSFET Switching Times are Essentially
Independent of Operating
Temperature
V
GS
= 10V, I
D
= 9.2A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
MIN
100
2.0
-
-
9.2
-
-
2.7
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.25
4.1
9
30
18
20
10
2.5
2.5
350
130
25
3.5
MAX
-
4.0
250
1000
-
±100
0.27
-
13
63
70
59
30
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
2.5
80
o
C/W
o
C/W
4-173
IRF520
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
9.2
37
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 9.2A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/µs
-
5.5
0.17
-
100
0.5
2.5
240
1.1
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
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