PD- 94948
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
l
Very Low RDS(on) at 4.5V V
GS
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
6.0mΩ
I
D
110A
TO-220AB
IRF3711PbF
D
2
Pak
IRF3711SPbF
TO-262
IRF3711LPbF
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
Fully Characterized Avalanche Voltage
and Current
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
2/27/04
IRF3711/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
4.7
6.2
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
6.0
V
GS
= 10V, I
D
= 15A
mΩ
8.5
V
GS
= 4.5V, I
D
= 12A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
29
7.3
8.9
33
12
220
17
12
2980
1770
280
Max. Units
Conditions
–––
S
V
DS
= 16V, I
D
= 30A
44
I
D
= 15A
–––
nC V
DS
= 10V
–––
V
GS
= 4.5V
–––
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V
–––
I
D
= 30A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= 10V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
460
30
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
––– 110
–––
440
1.3
–––
75
92
72
98
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.88
––– 0.82
––– 50
––– 61
––– 48
––– 65
2
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
R
=10V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 16A, V
R
=10V
di/dt = 100A/µs
www.irf.com
IRF3711/S/LPbF
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
100
2.7V
2.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
10
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.0
I
D
= 110A
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
0.5
10
2.0
V DS = 25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF3711/S/LPbF
100000
14
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 30A
12
10
8
6
4
2
0
V
DS
= 16V
V
DS
= 10V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 150
°
C
ID, Drain-to-Source Current (A)
1000
10
100
100µsec
1msec
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
V
SD
,Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3711/S/LPbF
120
LIMITED BY PACKAGE
100
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
80
-
V
DD
V
GS
60
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
20
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
stm32/stm8
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