Datasheet> 器件分类 > 分立半导体> 晶体管> CMRDM3575BK

CMRDM3575BK: 产品描述Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-963, 6 PIN; 产品类别分立半导体晶体管; 文件大小523KB，共2页; 制造商Central Semiconductor

下载文档详细参数选型对比全文预览

CMRDM3575BK概述

Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-963, 6 PIN

CMRDM3575BK规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Central Semiconductor
零件包装代码	SOT
包装说明	SOT-963, 6 PIN
针数	6
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOGIC LEVEL COMPATIBLE
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	20 V
最大漏极电流 (Abs) (ID)	0.16 A
最大漏极电流 (ID)	0.16 A
最大漏源导通电阻	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G6
JESD-609代码	e0
元件数量	2
端子数量	6
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)	0.125 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

Product Brief

CMRDM3575

N-Channel and P-Channel

Complementary MOSFETs in the SOT-963

The new dual complementary CMRDM3575 consists of a 20V,

160mA N-Channel MOSFET and a 20V, 140mA P-Channel

MOSFET. Packaged in the ultra miniature SOT-963 surface

mount case, this new device is an integrated solution designed

for circuits requiring N-Channel and P-Channel MOSFETs with

comparable electrical characteristics. The CMRDM3575 is ideal

for power management applications, such as synchronous load

rectification or buck conversion.

SOT-963

Typical Electrical Characteristic

Features:

•

Low threshold voltage

Integrated ESD protection

Space saving SOT-963 package

Low profile package

Applications:

• Load power switches

• Power supply converter circuits

• Battery charging circuits

Samples and Literature

Benefits:

• Uses less board space

• Facilitates assembly cost reduction

• Energy efficient

Package Comparison:

The SOT-963 utilizes

61%

less board space than SOT-563

1.05mm

1.7mm

To order samples of this device visit:

www.centralsemi.com/info/CMRDM3575

1.7mm

1.05mm

The SOT-963 has

16%

lower proﬁle than SOT-563

0.5mm

0.6mm

Order your selection guides today.

Visit: web.centralsemi.com/search/sample.php

TA=25˚C

BVDSS

(V)

MIN

(mA)

MAX

VGS(th)

(V)

MIN

MAX

Electrical Characteristics

rDS(ON)

(Ω)

TYP

1.5

2.0

3.0

4.0

5.5

8.0

(Ω)

MAX

3.0

4.0

6.0

5.0

7.0

4.5

2.5

1.8

1.5

4.5

2.5

1.8

1.5

100

@ VGS

(V)

@ ID

(mA)

Ciss

(pF)

TYP

Crss

(pF)

TYP

Thermal Characteristics

(mW)

TJ, Tstg

(˚C)

MAX

(˚C/W)

MAX

N-Channel

160

0.4

1.0

9.0

2.2

125

-65 to +150

1000

P-Channel

140

0.4

1.0

125

-65 to +150

1000

Also available: CMRDM3590, Dual, N-Channel MOSFETs in the SOT-963 package.

CMRDM7590, Dual, P-Channel MOSFETs in the SOT-963 package.

145 Adams Avenue

•

Hauppauge

•

New York

•

11788

•

USA

•

www.centralsemi.com

CMRDM3575BK相似产品对比

	CMRDM3575BK	CMRDM3575TR
描述	Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-963, 6 PIN	Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-963, 6 PIN
是否无铅	含铅	含铅
是否Rohs认证	不符合	不符合
厂商名称	Central Semiconductor	Central Semiconductor
零件包装代码	SOT	SOT
包装说明	SOT-963, 6 PIN	SOT-963, 6 PIN
针数	6	6
Reach Compliance Code	unknown	not_compliant
ECCN代码	EAR99	EAR99
其他特性	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	20 V	20 V
最大漏极电流 (Abs) (ID)	0.16 A	0.16 A
最大漏极电流 (ID)	0.16 A	0.16 A
最大漏源导通电阻	10 Ω	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G6	R-PDSO-G6
JESD-609代码	e0	e0
元件数量	2	2
端子数量	6	6
工作模式	DEPLETION MODE	DEPLETION MODE
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)	0.125 W	0.125 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子面层	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

CMRDM3575BK

CMRDM3575BK概述

CMRDM3575BK规格参数

文档预览

CMRDM3575BK相似产品对比

推荐资源