IRF352概述

14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

14 A, 400 V, 0.4 ohm, N沟道, 硅, POWER, 场效应管, TO-204AA

IRF352规格参数

	IRF352	IRF350-353	IRF351	IRF353	IRF350
描述	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
端子数量	2	2	2	2	-
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	-
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
元件数量	1	1	1	1	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	-
是否Rohs认证	-	-	不符合	不符合	不符合
厂商名称	-	-	Fairchild	Fairchild	Fairchild
Reach Compliance Code	-	-	compliant	unknow	compli
配置	-	-	SINGLE	SINGLE	Single
最大漏极电流 (Abs) (ID)	-	-	15 A	13 A	14 A
FET 技术	-	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	-	-	e0	e0	e0
工作模式	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	-	-	150 °C	150 °C	150 °C
极性/信道类型	-	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	-	-	150 W	150 W	150 W
表面贴装	-	-	NO	NO	NO
端子面层	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ