POWER, FET
POWER, 场效应晶体管
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Fairchild |
零件包装代码 | TO-3P |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
雪崩能效等级(Eas) | 553 mJ |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 400 V |
最大漏极电流 (Abs) (ID) | 11 A |
最大漏极电流 (ID) | 11 A |
最大漏源导通电阻 | 0.55 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 162 W |
最大脉冲漏极电流 (IDM) | 44 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
IRF340 | MTM8N40 | MTM8N35 | IRF341 | IRF340-343 | IRF342 | IRF343 | IRF741 | IRF742 | IRF743 | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | POWER, FET | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
元件数量 | 1 | - | - | - | 1 | - | 1 | 1 | 1 | 1 |
端子数量 | 3 | - | - | - | 3 | - | 3 | 3 | 3 | 3 |
端子形式 | THROUGH-HOLE | - | - | - | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | - | - | - | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | - | - | - | SILICON | - | SILICON | SILICON | SILICON | SILICON |
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