Bulletin PD-20768 rev. C 09/04
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Hyperfast Rectifier
Features
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
t
rr
=30ns max.
I
F(AV)
= 30Amp
V
R
= 200V
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T
C
= 159°C Per Diode
Per Device
I
FSM
T
J
, T
STG
Non Repetitive Peak Surge Current @ T
J
= 25°C
Operating Junction and Storage Temperatures
@ T
C
= 125°C (FULLPACK) Per Diode
30
200
- 65 to 175
°C
Max
200
15
Units
V
A
Case Styles
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Base
Common
Cathode
2
Base
Common
Cathode
2
Base
Common
Cathode
2
2
1
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
Common
Cathode
3
Anode
Anode
TO-220AB
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D
2
PAK
TO-262
TO-220 FULLPACK
1
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. C
09/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 15A, T
J
= 25°C
I
F
= 15A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
0.92 1.05
0.78 0.85
-
5
57
8
10
300
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
-
26
40
2.8
6.0
37
120
35
30
-
-
-
-
-
-
nC
A
ns
I
F
= 1A, di
F
/dt = 50A/µs, V
R
= 30V
I
F
= 1A, di
F
/dt = 100A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
di
F
/dt = 200A/µs
V
R
= 160V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance,
Junction to Case
Device Marking
- 65
Per Diode
Fullpack (Per Diode)
Min
-
-
-
-
Typ
-
175
-
-
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Max
175
1.1
3.5
Units
°C
°C/W
Case Style TO-220
Case Style D
2
Pak
Case Style TO-262
Case Style Fullpack
Mounting Surface, Flat, Smooth and Greased
2
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30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. C
09/04
100
(µ A)
100
Tj = 175˚C
10
1
0.1
0.01
0.001
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
Tj = 175˚C
Tj = 125˚C
Reverse Current - I
F
(A)
R
0.0001
0
50
100
150
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
Tj = 25˚C
1000
(pF)
T J = 25˚C
Junction Capacitance - C
T
100
1
0.4
10
0.6
0.8
1
1.2
1.4
1.6
0
50
100
150
200
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
0.1
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
10
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3
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. C
09/04
10
(°C/W)
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
thJC
P
DM
t1
t2
0.1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
170
160
150
140
130
120
Square wave (D = 0.50)
Rated Vr applied
170
DC
160
Square wave (D = 0.50)
DC
150
Rated Vr applied
see note (2)
110
see note (2)
100
0
5
10
15
20
F(AV)
140
0
5
10
15
20
F(AV)
25
25
(A)
Average Forward Current - I
(A)
Average Forward Current - I
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
25
Average Power Loss ( Watts )
20
15
10
5
0
0
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
Average Forward Current - I
F
(AV)
(A)
5
10
15
20
25
Fig. 8 - Forward Power Loss Characteristics
4
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30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. C
09/04
100
IF = 15 A
1000
IF = 15 A
Qrr ( nC )
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
trr ( ns )
100
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
10
100
1000
10
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
di
F
/dt
D
G
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
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