FLL600IQ-2
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 60W (Typ.)
High PAE: 43% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
•
Solid State Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
125
-65 to +175
+175
Unit
V
V
W
°C
°C
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IQ
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
I
DSR
η
add
R
th
Channel to Case
V
DS
= 12V
f=1.96GHz
I
DS
= 4.0A
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Limits
Min. Typ. Max.
-
-
-1.0
-5
47.0
9.5
-
-
-
24
12
-2.0
-
48.0
10.5
11.0
43
0.8
32
-
-3.5
-
-
-
15.0
-
1.2
Unit
A
S
V
V
dBm
dB
A
%
°C/W
G.C.P.: Gain Compression Point
Edition 1.7
December 1999
1
FLL600IQ-2
OUTPUT POWER vs. IMD
VDS = 12V
IDS = 4.0A
f = 1.96GHz
∆f
= 5.0MHz
2-tone test
-28
-32
-36
-40
IMD (dBc)
IM3
IM5
-44
-48
-52
-56
-60
26
28
30
32
34
36
38
40
42
44
Total Output Power (dBm)
S-PARAMETERS
VDS = 12V, IDS = 2A
FREQUENCY
(MHZ)
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S11
MAG
.952
.934
.911
.872
.797
.688
.560
.864
.672
.766
.822
.854
.867
.875
.868
.865
.842
.807
.732
.561
.486
S21
ANG
169.0
166.3
163.3
159.4
155.4
153.0
159.1
173.4
177.9
174.9
170.1
163.9
157.6
150.2
141.0
132.9
117.4
93.4
50.7
-43.5
134.7
S12
ANG
MAG
.004
.006
.006
.006
.009
.011
.013
.014
.013
.012
.011
.011
.010
.012
.012
.012
.015
.020
.021
.021
.005
S22
ANG
-15.0
-38.5
-33.2
-44.6
-73.9
-81.3
-111.7
-138.7
-164.6
174.4
162.0
149.4
134.5
119.7
111.9
103.1
89.8
65.6
30.1
-26.3
160.1
MAG
.808
.865
.958
1.098
1.287
1.516
1.661
1.612
1.398
1.185
1.021
.906
.832
.800
.792
.811
.867
.947
.997
.814
.450
MAG
.893
.903
.905
.910
.918
.936
.947
.949
.929
.913
.902
.885
.871
.864
.846
.831
.812
.785
.770
.739
.712
ANG
178.0
177.9
177.9
177.5
177.0
176.2
174.7
172.1
170.0
168.9
168.5
167.7
166.7
166.5
165.5
162.8
162.0
160.9
160.5
158.7
158.4
32.9
24.6
14.8
3.0
-12.2
-32.7
-58.7
-86.1
-110.1
-128.8
-143.3
-155.7
-167.2
-178.0
170.4
160.1
145.8
126.5
101.3
59.2
100.9
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
3
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