Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-03184
Features
• Cascadable 50
Ω
Gain Block
• Low Noise Figure:
2.6 dB Typical at 1.5 GHz
• High Gain:
25 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 2.5 GHz
• Unconditionally Stable
(k>1)
• Low Power Dissipation:
10 mA Bias
• Low Cost Plastic Package
feedback amplifier housed in a
low cost surface mount plastic
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP’s 10 GHz f
T
,
25 GHz f
MAX
, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
84 Plastic Package
Description
The INA-03184 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
Typical Biasing Configuration
C
bypass
1
(Optional)
V
CC
RFC (Optional)
R
bias
C
block
RF IN
1
2
4
3
V
d
= 4.0 V
(Nominal)
C
block
RF OUT
Note:
1. VSWR can be improved by bypassing
a 100–120
Ω
bias resistor directly to
ground. See AN-S012: Low Noise
Amplifiers.
5965-9678E
6-108
INA-03184 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
25 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance:
θ
jc
= 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/°C for T
C
> 130°C.
INA-03184 Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
ISO
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 10 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[2]
Reverse Isolation (|S
12
|
2
)
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 1.5 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 0.1 to 2.0 GHz
Units
dB
dB
GHz
dB
Min.
23.0
Typ.
25.0
±
0.8
2.5
35
2.0:1
3.0:1
[3]
Max.
dB
dBm
dBm
psec
V
mV/°C
3.0
2.6
–2.0
7
210
4.0
+
4
5.0
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (G
P
).
3. VSWR can be improved by bypassing a 100–200
Ω
bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Part Number Ordering Information
Part Number
INA-03184-TR1
INA-03184-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-109
INA-03184 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 10 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.32
.32
.32
.32
.32
.32
.32
.30
.31
.30
.26
.22
.09
.14
.24
.29
179
176
172
165
158
151
144
135
126
117
102
92
91
160
151
139
25.6
25.6
25.6
2.5
25.4
25.4
25.2
25.2
25.2
25.1
24.9
24.4
22.2
18.9
15.4
12.4
19.14
19.05
19.05
18.78
18.71
18.53
18.18
18.27
18.10
17.92
17.49
16.62
12.88
8.79
5.92
4.18
–3
–7
–14
–29
–43
–57
–72
–86
–102
–117
–135
–153
168
134
108
87
–37.1
–37.1
–37.1
–37.1
–36.5
–36.5
–35.9
–35.9
–35.4
–34.9
–34.4
–34.0
–33.6
–32.8
–32.0
–30.8
.014
.014
.014
.014
.015
.015
.016
.016
.017
.018
.019
.020
.021
.023
.025
.029
3
4
6
10
11
13
21
25
30
38
44
49
57
65
69
81
.55
.57
.55
.53
.51
.51
.50
.50
.49
.48
.45
.40
.26
.22
.26
.28
0
–3
–5
–11
–14
–17
–20
–23
–29
–34
–41
–50
–48
–33
–33
–43
1.48
1.45
1.48
1.53
1.49
1.50
1.46
1.46
1.42
1.38
1.39
1.44
1.87
2.40
3.01
3.52
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
INA-03184 Typical Performance, T
A
= 25°C
(unless otherwise noted)
30
Gain Flat to DC
25
4.0
I
d
(mA)
15
5.0
25
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
G
p
(dB)
30
f = 0.1–2 GHz
25
f = 3 GHz
NF (dB)
G
p
(dB)
20
3.0
20
20
10
15
2.0
15
5
10
0.1
0.2
0.5
1.0
2.0
1.0
5.0
0
0
2
4
V
d
(V)
6
8
10
10
5
10
15
I
d
(mA)
20
25
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
A
= 25°C, I
d
= 10 mA.
27
G
p
(dB)
26
25
24
P
1 dB
G
p
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
8
5.0
4
P
1 dB
(dBm)
P
1 dB
(dBm)
0
–2
–4
NF (dB)
I
d
= 16 mA
0
I
d
= 10 mA
–4
I
d
= 8 mA
4.0
3.0
I
d
= 8 mA
NF (dB)
3.0
NF
2.0
–25
+25
+85
–6
2.0
I
d
= 10 to 16 mA
–8
0.1
0.2
0.5
1.0
2.0
5.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, I
d
= 10 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-110
84 Plastic Package Dimensions
0.51 (0.020)
4
GROUND
RF OUTPUT
AND DC BIAS
3
1
2
031
2.15
(0.085)
5°
RF INPUT
GROUND
0.20 ± 0.050
(0.008 ± 0.002)
1.52 ± 0.25
(0.060 ± 0.010)
5.46 ± 0.25
(0.215 ± 0.010)
0.51
(0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-111
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